IM6432SDBATG-6I

The IM6432SDBATG-6I is a 64Mbit Synchronous DRAM organized as 4 banks × 512Kbit × 32 (2M × 32) designed for synchronous, clocked memory systems. It provides full SDRAM functionality with programmable CAS latency, burst options and a LVTTL I/O interface, supporting system clock rates up to 166 MHz.

Built for systems requiring organized, high-speed volatile memory, the device offers multiple refresh modes, programmable burst behavior and is available in an 86-pin TSOP II package with 3.3 V ±0.3 V supply support and multiple ambient temperature grades.

Key Features

• Memory Architecture — 64 Mbit SDRAM organized as 4 banks × 512Kbit × 32 (2M × 32) for interleaved bank operation and sequential access.
• High-Speed Operation — System frequency up to 166 MHz with clock cycle time tCK = 6 ns and clock access time tAC = 5.4 ns at CAS latency 3.
• Programmable Latency & Burst Control — Programmable CAS latency values 2 or 3 and selectable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave).
• Synchronous Command Set — Full synchronous DRAM with all signals referenced to the rising edge of the clock; supports Single Pulsed RAS Interface, automatic and controlled precharge, and Random Column Address every CLK (1‑N rule).
• Refresh and Power Management — Auto Refresh, Self Refresh (note: self refresh not supported with Tambient > 85°C), Power Down mode; refresh intervals specified for multiple ambient ranges.
• Interface & I/O — LVTTL interface with separate VDD, VDDQ and VSS, VSSQ power pins; data mask (DQM0–DQM3) for read/write control and support for multiple burst read with a single write.
• Package & Mounting — Available in 86-pin TSOP II (86-TFSOP) package (0.400" / 10.16 mm width), suitable for surface-mount PCB designs.
• Voltage & Temperature — Single 3.3 V ±0.3 V supply (3.0 V–3.6 V); available temperature grades include Commercial (0°C to +70°C), Industrial (-40°C to +85°C) and High (-40°C to +105°C).
• Compliance Option — Lead-free/RoHS option available.

Unique Advantages

• Flexible performance scaling: Programmable CAS latency (2, 3) and multiple burst length options let designers tune throughput and latency to match system timing and bandwidth needs.
• Deterministic synchronous timing: All controls and data operate referenced to the clock rising edge, enabling predictable timing for high-speed sequential and interleaved access up to 166 MHz.
• Robust refresh control: Auto and self refresh modes plus defined refresh intervals for different ambient ranges simplify memory retention management across temperature grades.
• Compact board footprint: 86-pin TSOP II package delivers 64 Mbit density in a surface-mount form factor suitable for compact system designs.
• 3.3 V LVTTL I/O: Standard 3.3 V I/O and separate I/O power pins (VDDQ/VSSQ) support straightforward integration into common 3.3 V logic domains.
• Temperature grade options: Available commercial, industrial and high-ambient variants let designers select the grade matched to their operating environment.

Why Choose IM6432SDBATG-6I?

The IM6432SDBATG-6I combines a 64 Mbit SDRAM architecture with programmable latency, burst control and synchronous operation up to 166 MHz, making it a practical choice for systems that require predictable, high-rate DRAM access in a compact TSOP II package. Its selectable temperature grades, defined refresh behavior and LVTTL I/O simplify integration across a range of embedded and industrial designs.

Manufactured by Intelligent Memory Ltd., this device is suited to designers who need a 3.3 V SDRAM solution with flexible timing options, surface-mount packaging and lead-free availability for production planning and long-term design stability.

Request a quote or contact sales to discuss availability, lead times and production options for IM6432SDBATG-6I.