IM5116D2DDBG-25

The IM5116D2DDBG-25 is a 512 Mbit DDR2 SDRAM organized as 32M × 16, optimized for 1.8 V SSTL_18 systems. It is the x16 component in Intelligent Memory’s IM51 DDR2 family and is offered in the -25 speed grade (DDR2-800 timing) with a 400 MHz system clock capability.

Designed for high-throughput memory applications, the device implements a 4-bank architecture, on-chip DLL and On-Die Termination to support synchronized, reliable DDR2 transfers while offering programmable latencies and refresh modes for system integration flexibility.

Key Features

• Memory Architecture 512 Mbit DDR2 SDRAM organized as 32M × 16 with 4 internal banks and a 4-bit prefetch architecture for burst transfers.
• Performance -25 speed grade (DDR2-800 timing) supporting a system clock frequency up to 400 MHz and an access time listed as 400 ps.
• Timing and Latency Programmable CAS latency settings (3, 4, 5, 6, 7) and programmable additive latency (0–6). Write latency equals read latency minus one.
• Burst, Wrap and Commands Programmable burst lengths of 4 or 8 and selectable wrap sequence (sequential or interleave). Supports automatic and controlled precharge commands.
• Power and Refresh JEDEC 1.8 V ±0.1 V supply (VDD and VDDQ), power-down mode, auto-refresh and self-refresh. Average refresh intervals: 7.8 µs (0°C ≤ Tcase ≤ 85°C) and 3.9 µs (85°C ≤ Tcase ≤ 95°C).
• Signal Integrity On-Die Termination (ODT), on-chip DLL to align DQ/DQs transitions with CK, and an option for weak-strength data-output drivers. Bidirectional differential data strobe (DQS/DQS) supported; single-ended DQS is optional.
• Interface SSTL_18 compatible memory interface for DDR2 system integration.
• Package and Temperature 84-ball FBGA (8 mm × 12.5 mm) package for the x16 component and a commercial case operating range of 0°C to 95°C.
• Operational Timing Write cycle time (word page) specified at 15 ns to support sustained write operations.

Unique Advantages

• DDR2-800 (–25) timing with 400 MHz system clock: Enables high-rate DDR2 transfers consistent with the -25 speed grade.
• Flexible latency programming: Multiple CAS and additive latency options let designers balance throughput and timing margins for target systems.
• On-chip timing and termination: DLL and ODT features improve signal alignment and termination without external components, aiding timing closure on DDR2 designs.
• Compact BGA footprint: 84-ball FBGA (8 × 12.5 mm) x16 package provides a space-efficient memory option for board-level integration.
• Commercial temperature range: Specified 0°C to 95°C Tcase for deployment in standard commercial environments.

Why Choose IM5116D2DDBG-25?

The IM5116D2DDBG-25 provides a verified DDR2 x16 memory option with DDR2-800 timing, programmable latency, and on-die features (ODT, DLL) that simplify timing and signal integrity management in DDR2 systems. Its SSTL_18 interface, 84-ball FBGA package, and commercial temperature rating make it suitable for system designs requiring a compact, configurable 512 Mbit DDR2 solution.

This device is appropriate for design teams focused on robust DDR2 memory integration where configurable timing, on-chip termination, and a compact package are required to meet board-level constraints and performance targets.

Request a quote or submit an inquiry to obtain pricing, availability and additional product support information for the IM5116D2DDBG-25.