IM2516SDBDBG-6

The IM2516SDBDBG-6 from Intelligent Memory Ltd. is a 256 Mbit Synchronous DRAM organized as 16M × 16 (4 banks × 4Mbit × 16). It implements full synchronous operation with an internal pipelined architecture to deliver high-speed, clock-synchronized memory access for embedded and digital systems.

Targeted for applications requiring a single 3.3 V supply and LVTTL signaling, the device supports up to 166 MHz clock operation with programmable CAS latency and flexible burst modes to match a range of system timing requirements.

Key Features

• Memory Architecture 4 banks × 4Mbit × 16 organization providing a total of 256 Mbit (16M × 16) storage in a single device.
• Performance Supports clock frequencies up to 166 MHz with a maximum access time from CLK of 5 ns and a minimum clock cycle time of 6 ns.
• Programmable Latency & Burst Programmable CAS latency of 2 or 3 with selectable burst types (Sequential or Interleaved) and programmable burst lengths of 1, 2, 4, 8 or full page.
• Refresh & Power Modes Auto Refresh and Self Refresh supported with a refresh interval of 8192 cycles per 64 ms, plus CKE power down mode for reduced power during idle periods.
• Interface & Voltage LVTTL interface with a single supply voltage of 3.3 V ± 0.3 V (specified supply range 3.0 V to 3.6 V) and write cycle time (word page) of 12 ns.
• Package & Mounting Available in 54-ball FBGA (8 mm × 8 mm) / 54-TFBGA package for compact board-level integration.
• Operating Temperature Commercial ambient: 0°C to +70°C; Industrial ambient option: -40°C to +85°C (temperature options indicated in device marking).
• Regulatory & Construction Lead-free / RoHS option indicated in datasheet marking; input/output capacitances specified for design considerations (CIN 2–4 pF, CIO 4–6 pF at VDD = 3.3 V).

Typical Applications

• Embedded memory buffering — Temporary data storage in microcontroller- or FPGA-based systems requiring synchronous, burst-access memory up to 166 MHz.
• High-throughput digital subsystems — Frame buffering or intermediate data buffering where programmable CAS latency and burst control help align memory timing with system buses.
• Compact board-level designs — Systems that benefit from a small 54-ball FBGA package and single 3.3 V supply for space- and power-constrained designs.

Unique Advantages

• High-frequency operation: Up to 166 MHz clock support and 5 ns access from clock enable faster sequential data rates where supported by system timing.
• Flexible timing control: Selectable CAS latency (2 or 3) and multiple burst length and type options enable tuning to system performance and latency trade-offs.
• Power and refresh management: Auto/self refresh and CKE power-down modes reduce power during idle periods while maintaining data integrity through standard refresh intervals.
• Compact FBGA footprint: 54-ball FBGA (8×8 mm) packaging minimizes board area for dense designs while providing standard ballout for x16 configuration.
• Standard LVTTL interface and 3.3 V supply: Simplifies integration with common 3.3 V digital logic domains and interfaces.
• Design-ready electrical characteristics: Documented input and I/O capacitances support signal integrity and PCB design planning.

Why Choose IM2516SDBDBG-6?

The IM2516SDBDBG-6 is positioned for designs that require a compact, synchronous DRAM device with up to 166 MHz operation, programmable latency and flexible burst control. Its 4-bank, 16M × 16 organization (256 Mbit) and single 3.3 V supply make it suitable for a variety of embedded and digital buffering tasks where deterministic, clock-synchronized access is required.

With built-in refresh modes, CKE power-down capability, and a 54-ball FBGA package option, the device offers a practical balance of performance, power management and board-level density for engineering teams specifying memory for compact, high-speed systems.

Request a quote or submit a product inquiry for IM2516SDBDBG-6 to obtain availability, pricing and sample information.