IM2516SDBDBG-6I

The IM2516SDBDBG-6I is a synchronous DRAM device organized as 4 banks × 4Mbit × 16, delivering 256 Mbit of volatile memory in a high‑speed, pipelined architecture. The device supports full synchronous operation with LVTTL I/O and is specified for operation with a single 3.3 V ±0.3 V supply.

Designed for systems that require predictable, clock‑aligned memory access, the IM2516SDBDBG-6I provides programmable CAS latency and burst options to match a range of timing and throughput requirements, and is available in a compact 54‑ball FBGA package.

Key Features

• Core Organization — 4 banks × 4Mbit × 16 organization (16M × 16 overall) providing 256 Mbit of SDRAM storage.
• Performance — Supports clock rates up to 166 MHz with an access time from CLK up to 5 ns and clock cycle time of 6 ns (ordering speed code -6).
• Programmable Timing and Burst — Programmable CAS latency options (2, 3), selectable burst type (Sequential or Interleaved) and burst lengths of 1, 2, 4, 8 or full page; burst stop function supported.
• Refresh and Power Management — Auto Refresh and Self Refresh supported with 8192 refresh cycles/64 ms; CKE power‑down mode available for reduced power during idle periods.
• Interface and Signaling — LVTTL interface for data and control signals; all control, address and data I/O synchronized to the positive edge of the external clock.
• Voltage — Single supply: 3.3 V ±0.3 V (specified 3.0 V to 3.6 V).
• Timing Parameters — Write cycle time (word/page) 12 ns; row active time (tRAS) min. 42 ns; row cycle time (tRC) min. 60 ns.
• Package — Available in 54‑ball FBGA (8 mm × 8 mm) and 54‑pin TSOP II; supplier device package listed as 54‑FBGA (8×8).
• Operating Temperature Options — Datasheet options include Commercial (0°C to +70°C) and Industrial (−40°C to +85°C) ambient temperature ranges.
• I/O Characteristics — Input capacitance 2–4 pF; input/output capacitance 4–6 pF (typical conditions per datasheet).

Typical Applications

• Embedded memory subsystems — Use as synchronous main or buffer memory where 256 Mbit SDRAM with LVTTL signaling and clocked operation is required.
• High‑throughput data buffering — Burst modes, programmable CAS latency and pipelined architecture support sequential or interleaved high‑speed transfers up to 166 MHz.
• Industrial temperature systems — Industrial temperature option (−40°C to +85°C) supports deployment in thermally demanding environments.

Unique Advantages

• Configurable latency and burst behavior: Programmable CAS latency (2 or 3) and selectable burst lengths allow designers to tune latency and throughput to system requirements.
• Synchronous, pipelined architecture: Full synchronous operation and internal pipelining synchronize control, address and data to an external clock for deterministic timing.
• Standardized LVTTL interface: LVTTL signaling simplifies integration with logic level systems that use 3.3 V interfaces.
• Compact BGA footprint: 54‑ball FBGA (8 mm × 8 mm) package reduces board area for designs with tight space constraints.
• Built‑in refresh and low‑power modes: Auto Refresh, Self Refresh and CKE power‑down support system power management and data retention during idle periods.
• Industry temperature option: Availability of industrial temperature grading supports deployment across a wider ambient temperature range.

Why Choose SDRAM, 256MB, 3.3V, 16MX16, 166M?

The IM2516SDBDBG-6I is positioned for designs that need a synchronous, high‑speed DRAM with flexible timing options and industry‑grade operating ranges. Its 4‑bank architecture, programmable CAS latency, and burst configurations provide tuning options for a variety of throughput and latency tradeoffs.

This device is suited to engineers specifying a 256 Mbit SDRAM with LVTTL I/O and compact FBGA packaging where predictable, clocked memory behavior and standard refresh/power modes are required. The datasheet‑defined timing, supply, and temperature options provide a clear basis for system integration and long‑term deployment planning.

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