IM2516SDBATG-6I

The IM2516SDBATG-6I is a 256 Mbit Synchronous DRAM organized as 4 banks × 4Mbit × 16, designed for systems requiring synchronous DRAM memory with a 3.3 V supply. It implements a prefetch architecture with all control, address and data signals synchronized to the rising edge of an external clock to support high-speed, burst-oriented data transfers.

Key technical attributes include support for up to 166 MHz system clock operation, a LVTTL interface, programmable CAS latency (2 or 3), and industrial operating temperature range from -40°C to 85°C, making it suitable for designs that need deterministic synchronous DRAM behavior at 3.3 V.

Key Features

• Memory Organization — 4 banks × 4Mbit × 16 organization providing a total density of 256 Mbit (16M × 16).
• High-Speed Operation — Supports system clock rates up to 166 MHz (6 ns cycle at CL = 3) with clock access time specifications around 5.4–5.5 ns.
• Programmable Timing and Burst — Programmable CAS latency (2, 3), selectable wrap sequence (Sequential or Interleave), and programmable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave).
• Standard SDRAM Commands — Full synchronous DRAM with Single Pulsed RAS interface, data mask for read/write control, automatic and controlled precharge, auto refresh and self-refresh support.
• Refresh and Data Integrity — Refresh interval of 8,192 cycles per 64 ms, supporting standard DRAM refresh requirements.
• Interface and Signalling — LVTTL-compatible interface with BA0/BA1 bank control, LDQM/UDQM data masks, and single clocked control signals (CLK, CKE, RAS, CAS, WE, CS).
• Power — Single 3.3 V ± 0.3 V power supply range (3.0 V to 3.6 V) with Power Down mode to reduce dynamic activity when idle.
• Package and Mounting — Available in 54-pin TSOP II (0.400", 10.16 mm width) package; provided as a volatile DRAM device for standard board mounting.
• Industrial Temperature Range — Rated for operation from -40°C to 85°C (TA) for extended temperature applications.

Unique Advantages

• Deterministic synchronous interface: All control, address and data signals are synchronized to the clock rising edge, simplifying timing analysis in clocked designs.
• Flexible burst and latency configuration: Programmable CAS latency and burst options enable tuning for different access patterns and system throughput requirements.
• Compact TSOP II package: 54-pin TSOP II package provides a dense footprint for designs with PCB area constraints while preserving full x16 data width.
• Industrial temperature support: Specified operation from -40°C to 85°C (TA), supporting deployment in environments with elevated thermal requirements.
• Standard refresh and power modes: Auto-refresh, self-refresh and power-down modes simplify memory retention and low-activity power management.
• LVTTL-compatible signaling: Standard LVTTL interface eases integration into systems using common 3.3 V logic levels.

Why Choose IM2516SDBATG-6I?

The IM2516SDBATG-6I delivers synchronous DRAM functionality with a clear set of timing and burst features for designs that require a 256 Mbit, x16 memory device operating at up to 166 MHz. Its combination of programmable CAS latency, standard SDRAM commands (auto/self-refresh, precharge, power down), and LVTTL interface offers a straightforward integration path for systems that need predictable, clock-synchronous memory behavior.

With a 3.3 V power range and -40°C to 85°C operating window, this SDRAM suits designs requiring industrial temperature performance and a compact 54-pin TSOP II package. Choose the IM2516SDBATG-6I when your design requires a verifiable, standards-based SDRAM building block from Intelligent Memory Ltd. with configurable burst and latency options.

Request a quote or submit a pricing and availability inquiry to start evaluating the IM2516SDBATG-6I for your design requirements.