IM1216SDBABG-6I

The IM1216SDBABG-6I is a 128 Mbit Synchronous DRAM organized as 8M×16 (4 banks × 2Mbit × 16) designed for synchronous high-speed memory applications. It implements full SDRAM architecture with programmable CAS latency, LVTTL interface, and support for burst sequencing to deliver predictable, clock‑aligned data transfers.

Targeted at systems requiring a compact BGA package and industrial temperature operation, the device supports a 166 MHz speed grade (6 ns clock cycle time) and a single 3.3 V ±0.3 V supply range for integration into 3.3 V system designs.

Key Features

• Memory Organization  8M×16 configuration (4 banks × 2Mbit × 16) providing 128 Mbit of DRAM storage.
• Speed and Timing  166 MHz speed grade (6 ns tCK) with programmable CAS latency (2, 3) and a Clock Access Time of 5 ns at CL=3 as specified for this grade.
• Burst and Access Modes  Programmable burst length (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave), programmable wrap sequence (sequential or interleave), and support for multiple burst read with single write operations.
• Interface and Control  LVTTL interface with full synchronous operation referenced to the clock rising edge; signals include BA0/BA1 for bank control and standard SDRAM command set (RAS, CAS, WE, CKE, CS).
• Power and Refresh  Single 3.3 V ±0.3 V supply (3.0–3.6 V), power down mode, automatic and self refresh, and a refresh interval of 4096 cycles/64 ms.
• Package and Temperature  Available in a 54‑ball FBGA (8 mm × 8 mm) package; rated for industrial ambient operation from -40°C to 85°C (TA).
• Timing Characteristics  Write cycle time (word page) specified at 12 ns; clock‑aligned control for predictable timing in synchronous systems.

Typical Applications

• Industrial Embedded Systems  Memory for controllers and modules that require industrial temperature range (-40°C to 85°C) and a standard 3.3 V supply.
• High‑Speed Buffering  Synchronous DRAM for buffering and working memory where clock‑synchronized burst transfers and programmable CAS latency are required.
• Compact Board Designs  Small 54‑ball FBGA (8×8 mm) package for space‑constrained printed circuit board layouts requiring a 128 Mbit SDRAM.

Unique Advantages

• Programmable Performance:  Selectable CAS latency (2 or 3) and multiple burst length options allow designers to tune latency and throughput to system needs.
• Industrial Temperature Support:  Rated for -40°C to 85°C ambient operation, enabling deployment in temperature‑sensitive and industrial environments.
• Standard 3.3 V Supply Compatibility:  Operates from 3.0 to 3.6 V (3.3 V nominal), matching common legacy and current 3.3 V system rails.
• Compact BGA Packaging:  54‑ball FBGA (8 mm × 8 mm) reduces board area while providing reliable soldered mounting for volume assemblies.
• Power Management and Refresh:  Built‑in power down, auto refresh and self refresh modes with a 4096/64 ms refresh interval to support low‑power and robust memory retention strategies.

Why Choose IM1216SDBABG-6I?

The IM1216SDBABG-6I is positioned for designs that require a compact, synchronous 128 Mbit DRAM with flexible timing (programmable CAS and burst control), standard LVTTL signaling, and industrial temperature range. Its 166 MHz speed grade and clock‑aligned architecture offer deterministic timing for systems that rely on predictable burst transfers.

This device is suitable for engineers specifying a 3.3 V SDRAM solution in space‑constrained boards, where package density, refresh capabilities, and industrial temperature performance are key selection criteria.

For pricing, availability, or to request a formal quote for IM1216SDBABG-6I, submit a request to our sales team with your quantity and lead‑time requirements.