FM6HZ8G8GKDZA (2R)

The FM6HZ8G8GKDZA (2R) is a multi-chip package (MCP) combining NAND Flash and LPDDR4x SDRAM technologies into a single surface-mount device. It integrates volatile and non-volatile memory in an MCP format to provide compact onboard storage and working memory for embedded systems.

Designed for industrial and automotive applications, this device offers qualified reliability (AEC-Q100), a wide operating temperature range, and a compact 9.5 × 8 mm, 149-ball package suitable for space-constrained designs.

Key Features

• Memory Architecture (MCP)  Integrated NAND + DRAM MCP combining non-volatile NAND Flash and volatile LPDDR4x SDRAM in a single package (NAND: 512M × 8 × 2 die; LPDDR4x: 256M × 16 × 2 die).
• Total Memory Capacity  MemorySize: 8.59 Gbit total capacity across the combined die configuration for onboard storage and working memory.
• Performance Characteristics  Clock frequency rated at 2.133 GHz and write cycle time (word/page) of 15 ns for timing-sensitive applications.
• Interface  Parallel memory interface for board-level integration with compatible system designs.
• Power  Voltage supply specified at 2.5V.
• Package and Mounting  Surface-mount 9.5 × 8 mm package with 149-ball BGA footprint for compact placement and high-density assemblies.
• Automotive and Industrial Qualification  Grade: Automotive with AEC-Q100 qualification and RoHS compliance to support regulated manufacturing requirements.
• Operating Temperature  Rated for −40°C to 105°C to meet extended-temperature application needs.

Typical Applications

• Automotive systems  AEC-Q100 qualification and a −40°C to 105°C operating range make this MCP suitable for automotive electronic modules that require combined NAND and DRAM memory.
• Industrial equipment  The compact MCP package and wide temperature tolerance support embedded controllers and industrial devices operating in harsh environments.
• Embedded storage and buffering  Integrated NAND Flash plus LPDDR4x SDRAM in a single package provides both persistent storage and working memory for compact embedded platforms.

Unique Advantages

• Integrated NAND + DRAM: MCP technology combines non-volatile and volatile memory within one package to reduce board area and simplify component sourcing.
• Automotive-grade qualification: AEC-Q100 qualification supports designs targeting automotive markets with specified reliability standards.
• Wide temperature tolerance: Operating range from −40°C to 105°C enables use in temperature-challenging environments.
• Compact BGA footprint: 9.5 × 8 mm, 149-ball package allows high-density placement in space-constrained assemblies.
• Deterministic timing specs: Provided clock frequency (2.133 GHz) and write cycle time (15 ns) supply concrete timing figures for system integration and validation.
• Standards compliance: RoHS compliance supports regulatory and manufacturing process requirements.

Why Choose FM6HZ8G8GKDZA (2R)?

The FM6HZ8G8GKDZA (2R) is positioned as a compact, qualified MCP solution that merges NAND Flash and LPDDR4x SDRAM to address embedded storage and working-memory needs in automotive and industrial designs. Its AEC-Q100 qualification, wide operating temperature range, and small BGA package make it suitable for applications where space, reliability, and environmental tolerance are essential.

Designers and procurement teams looking for a combined volatile/non-volatile memory package with defined timing and capacity characteristics will find this device appropriate for systems requiring integrated memory, consistent performance parameters, and compliance to industry manufacturing standards.

Request a quote or contact sales to discuss availability, lead times, and ordering for FM6HZ8G8GKDZA (2R).