FM6BD4G4GXMB (2V)

4Gb NAND+LPDDR2 MCP
Part Description

1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 4Gb LPDDR2 SDRAM (128Mbx32)

Quantity 672 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package10.5x8 (mm),162 ballMemory FormatMCPTechnologyMCP (NAND + DRAM)
Memory Size4 GbitAccess TimeN/AGradeCommercial
Clock Frequency533 MHzVoltage2.5VMemory TypeVolatile, Non-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page15 nsPackaging10.5x8 (mm),162 ball
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 32
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of FM6BD4G4GXMB (2V) – 1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 4Gb LPDDR2 SDRAM (128Mbx32)

The ESMT FM6BD4G4GXMB (2V) is a multi-chip package (MCP) that integrates NAND Flash and LPDDR2 SDRAM technologies, providing both non-volatile and volatile memory in a single surface-mount device. The module combines an MCP architecture (NAND + DRAM) with a compact 10.5 × 8 mm, 162-ball package for space-constrained designs.

This device is specified with a 533 MHz clock frequency, a 15 ns write cycle time (word/page), and a memory capacity of 4.295 Gbit. It is offered as a commercial-grade, RoHS-compliant component with an operating temperature range of 0 °C to 70 °C.

Key Features

  • Integrated MCP Architecture Combines NAND Flash and LPDDR2 SDRAM in a single package to provide both volatile and non-volatile memory functions.
  • Memory Capacity & Organization Total memory size listed as 4.295 Gbit with memory organization of 128M × 32. Product name indicates 512M × 8 NAND Flash plus 128M × 32 LPDDR2 SDRAM.
  • Interface & Performance Parallel memory interface with a clock frequency of 533 MHz and a write cycle time (word/page) of 15 ns.
  • Power Specified voltage supply: 2.5 V.
  • Package & Mounting Surface-mount device in a 10.5 × 8 mm, 162-ball package suitable for compact board layouts.
  • Temperature & Grade Commercial grade operation from 0 °C to 70 °C.
  • Environmental Compliance RoHS compliant.

Unique Advantages

  • Highly integrated solution: MCP combining NAND and DRAM reduces board area by co-locating volatile and non-volatile memory in one package.
  • Balanced memory mix: Integration of 512M × 8 NAND and 128M × 32 LPDDR2 provides both storage and working memory in a single component.
  • Compact footprint: 10.5 × 8 mm, 162-ball package supports space-constrained applications and simplified layout.
  • Performance-oriented timings: 533 MHz clock frequency and 15 ns write cycle time support responsive memory operations.
  • Compliance and grade clarity: Commercial-grade specification with RoHS compliance for standard consumer and embedded product lines.

Why Choose FM6BD4G4GXMB (2V)?

The FM6BD4G4GXMB (2V) is positioned as an integrated memory option where designers need both NAND Flash and LPDDR2 SDRAM in a compact MCP form factor. Its combination of memory organization, clock frequency, and write timing makes it a straightforward choice for systems that require co-located volatile and non-volatile memory while maintaining a small PCB footprint.

With a 10.5 × 8 mm, 162-ball surface-mount package, RoHS compliance, and commercial operating range of 0 °C to 70 °C, this ESMT MCP is suitable for embedded and consumer applications that benefit from integrated memory and simplified BOM management.

If you would like pricing, availability, or to request a quote for FM6BD4G4GXMB (2V), please submit a quote request or sales inquiry and our team will respond with detailed commercial information.

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