FM6BD4G2GXB(2V)

4Gb NAND+LPDDR2 MCP
Part Description

1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb LPDDR2 SDRAM (64Mbx32)

Quantity 719 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package10.5x8 (mm),162ballMemory FormatMCPTechnologyMCP (NAND + DRAM)
Memory Size4 GbitAccess TimeN/AGradeCommercial
Clock Frequency533 MHzVoltage2.5VMemory TypeVolatile, Non-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page15 nsPackaging10.5x8 (mm),162ball
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 32
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of FM6BD4G2GXB(2V) – 1.8V 4Gb NAND Flash (512Mbx8) + 1.8V 2Gb LPDDR2 SDRAM (64Mbx32)

The FM6BD4G2GXB(2V) is a multi-chip package (MCP) that combines NAND Flash and LPDDR2 SDRAM into a single surface-mount module. It integrates volatile and non-volatile memory technologies in an MCP architecture to provide both storage and working memory in one component.

Key physical and electrical attributes include a total memory size of 4.295 Gbit, 64M × 32 memory organization, a parallel memory interface, and a compact 10.5×8 mm, 162-ball package suitable for space-constrained designs.

Key Features

  • Memory Configuration 4.295 Gbit total memory combining volatile and non-volatile memory; memory organization is 64M × 32.
  • Technology MCP (NAND + DRAM) integrating NAND Flash with LPDDR2 SDRAM in one package.
  • Performance 533 MHz clock frequency and 15 ns write cycle time (word/page) for responsive memory operations.
  • Interface Parallel memory interface for direct system integration.
  • Voltage Voltage supply specified at 2.5V in the device specifications.
  • Package & Mounting Surface-mount MCP in a 10.5×8 mm, 162-ball package (surface mount footprint).
  • Operating Range Commercial grade operation from 0 °C to 70 °C.
  • Environmental Compliance RoHS compliant.

Typical Applications

  • Compact embedded systems Integrated NAND and DRAM in one MCP reduces board area for space-limited designs that require both storage and working memory.
  • Consumer devices Combined non-volatile and volatile memory supports local code and data storage alongside runtime memory within a single component.
  • Memory buffering and code execution LPDDR2 provides working memory while NAND Flash supplies persistent storage in one package for simplified memory architectures.

Unique Advantages

  • Highly integrated solution: MCP (NAND + DRAM) technology integrates NAND Flash and LPDDR2 SDRAM in a single component to consolidate memory functions.
  • Compact footprint: 10.5×8 mm, 162-ball package minimizes PCB real estate compared with multiple discrete devices.
  • Balanced memory capacity: 4.295 Gbit total with 64M × 32 organization supports combined storage and working memory needs.
  • Performance-oriented signaling: 533 MHz clock frequency and 15 ns write cycle time support timely data transfers and write operations.
  • Commercial temperature rating: Rated for operation from 0 °C to 70 °C for standard commercial applications.
  • Regulatory readiness: RoHS compliance for environmental conformity.

Why Choose FM6BD4G2GXB(2V)?

FM6BD4G2GXB(2V) is positioned as an integrated memory solution for designs that require both NAND Flash and LPDDR2 SDRAM in a compact MCP package. With a 4.295 Gbit memory complement, parallel interface, and a 10.5×8 mm, 162-ball surface-mount footprint, it simplifies BOM and layout considerations where combined storage and working memory are needed.

This commercial-grade MCP provides defined electrical and thermal parameters—including a specified 2.5V supply and 0 °C to 70 °C operating range—making it suitable for systems that prioritize integration, predictable performance, and RoHS environmental compliance.

Request a quote or submit an inquiry to discuss availability, pricing, and lead times for FM6BD4G2GXB(2V).

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