H54G46CYRVX267

The H54G46CYRVX267 is an SK hynix 2 GB LPDDR4X automotive memory and mobile DRAM organized as a dual-channel, single-chip-select device (2CH 1CS), each channel on an 8 Gb × 16 die delivering up to 4266 Mbps over a 16-bit data bus. On a 1.8V LPDDR4X triple-rail supply — VDD1 = 1.8V, VDD2 = 1.1V, VDDQ = 0.6V — this low power DRAM suits thermally constrained SoC platforms.

Factory-qualified to AEC-Q100 AIT grade across −40°C to 95°C, this JEDEC-compliant embedded DRAM targets ADAS, in-vehicle infotainment (IVI), digital cockpit, telematics ECU, and industrial embedded designs. RoHS compliant, lead-free, and halogen-free in a 200-ball FBGA (10 mm × 15 mm).

Key Features

• Dual-Channel x16 LPDDR4X Architecture
  2 GB as two independent 8 Gb × 16 channels each with 16-bit bus DQ[15:0], differential strobe pairs DQS[1:0]_t/_c, and two DMI pins per channel for write data masking and Data Bus Inversion (DBIdc).
• 4266 Mbps Double-Data-Rate Interface
  Two data accesses per clock cycle at up to 4266 Mbps (tCK(avg) min = 0.468 ns); single-data-rate command/address over 6-bit CA bus; differential clock CK_t/CK_c and bi-directional differential strobes DQS_t/DQS_c.
• Ultra-Low-Voltage Supply — VDDQ = 0.6V
  VDD1 = 1.8V (1.70V–1.95V), VDD2 = 1.1V (1.06V–1.17V), VDDQ = 0.6V (0.57V–0.65V); 0.6V VDDQ I/O domain reduces switching power in fanless automotive modules and mobile SoC platforms.
• AEC-Q100 AIT Automotive Grade — −40°C to 95°C
  Meets AEC-Q100 AIT across −40°C to 95°C; pin-compatible H54G46CYRQX267 extends to −40°C to 105°C (AEC-Q100 AAT) in the same 200-ball FBGA at 4266 Mbps.
• Programmable ODT, ZQ Calibration, and Burst Control
  Programmable CA ODT and DQ ODT with VSSQ termination (MR11, MR22); DQ ODT RZQ/1–RZQ/6 (240Ω–40Ω) with VOH-compensated output driver; background ZQ calibration; burst length 16 (default), 32, and on-the-fly; programmable RL/WL across FSP[0] and FSP[1].
• Advanced Refresh — Auto TCSR, Per-Bank, and PASR
  All-bank and directed per-bank auto refresh; Auto Temperature Compensated Self Refresh (Auto TCSR); Partial Array Self Refresh (PASR) with bank mask (MR16) and segment mask (MR17) to reduce active refresh area and standby power.
• 200-Ball FBGA — 10 mm × 15 mm, RoHS, Lead-Free, Halogen-Free
  0.80/0.65 mm pitch, 1.00 mm max height; RoHS compliant, lead-free, halogen-free LPDDR4X BGA for space-constrained automotive and embedded board designs.

Typical Applications

• ADAS, Digital Cockpit, and In-Vehicle Infotainment
  AEC-Q100 AIT qualification and 4266 Mbps dual-channel bandwidth suit ADAS SoCs, sensor fusion processors, IVI systems, and digital cockpit platforms across the −40°C to 95°C automotive range.
• Mobile SoCs and Edge-AI Inference
  0.6V VDDQ and dual-channel x16 architecture suit mobile application processors, neural network processors, and edge-AI inference accelerators prioritising bandwidth per milliwatt.
• Industrial IoT and Telematics
  PASR, Auto TCSR, and −40°C to 95°C operation support industrial IoT gateways, telematics ECUs, and V2X modules needing low power DRAM with adaptive refresh.

Unique Advantages

• AEC-Q100 AIT factory-qualified automotive memory: No additional qualification required, accelerating time-to-market for automotive designs.
• Frequency Set Point (FSP) switching: Dual FSPs enable atomic switch of timing, ODT, and Vref via a single MRW command for zero-gap DVFS in mobile and automotive SoCs.
• On-chip DQS Interval Oscillator: Tracks DQS clock-tree delay drift for adaptive re-training only when needed, reducing system overhead.
• Post Package Repair (PPR): Electrical-fuse-based repair of one failed row per bank per channel enables field yield recovery without package replacement.

Why Choose H54G46CYRVX267?

The H54G46CYRVX267 combines SK hynix LPDDR4X memory with AEC-Q100 AIT qualification, 4266 Mbps dual-channel bandwidth, 0.6V VDDQ low power DRAM architecture, PASR, Auto TCSR, FSP switching, and Post Package Repair in a compact 200-ball FBGA — an automotive memory and embedded DRAM solution for ADAS, digital cockpit, edge-AI, telematics ECU, and industrial IoT platforms.

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