IM1232SDBATG-6I

The IM1232SDBATG-6I is a synchronous DRAM device organized as 4 banks × 1Mbit × 32, providing a 128 Mbit memory capacity with clock-referenced control. It implements full SDRAM architecture with all control, address and data signals synchronized to the rising edge of an external clock.

Designed for systems requiring up to 166 MHz synchronous operation, the device offers programmable CAS latencies, selectable burst lengths and sequencing, and built-in refresh and power-management functions to support a range of system timing and power requirements.

Key Features

• Core / Memory Organization 4 banks × 1Mbit × 32 organization delivering 128 Mbit SDRAM capacity.
• Performance Supports system frequency up to 166 MHz (PC166) with a 6 ns clock cycle time. Clock access time is 5.4 ns at CAS latency 3 and 6 ns at CAS latency 2.
• Programmable Timing & Burst Control Programmable CAS latency (2 or 3), programmable burst length (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave) and programmable wrap sequence (sequential or interleave).
• Burst & Data Handling Multiple burst read with single write operation and data mask (DQM) support for read/write control.
• Refresh & Power Modes Auto Refresh and Self Refresh supported, with a refresh interval of 4096 cycles/64 ms. Power Down mode reduces power when idle.
• Interface & Signaling LVTTL-compatible interface with all signals synchronized to clock rising edge; supports single 3.3 V ± 0.3 V supply (3.0–3.6 V).
• Packages Available in 86-pin TSOP II (86-TFSOP, 0.400" / 10.16 mm width) and 90-ball FBGA package options.
• Industrial Temperature Rated for operation from −40°C to 85°C (TA), suitable for extended temperature environments.
• Control Signals Full synchronous control including CLK, CKE, CS, RAS, CAS, WE, and bank-addressing via BA0/BA1.

Unique Advantages

• High-frequency synchronous operation: Up to 166 MHz system frequency enables high-rate sequential data transfer depending on burst settings and CAS latency.
• Flexible timing configuration: Programmable CAS latency and multiple burst lengths let system designers match memory timing to system requirements.
• Interleaved 4-bank architecture: Four independent banks allow improved random-access throughput compared with single-bank DRAMs.
• Standard 3.3 V LVTTL interface: Integrates with common 3.3 V systems and simplifies I/O signaling and power design.
• Robust refresh and power modes: Auto/self-refresh plus power-down support help manage power and data retention across operating modes.
• Package and temperature options: TSOP-II and FBGA packages plus −40°C to 85°C rating provide board and environment flexibility.

Why Choose IM1232SDBATG-6I?

The IM1232SDBATG-6I combines a 4-bank × 1Mbit × 32 SDRAM architecture with programmable timing and burst features to deliver flexible, clock-synchronous memory up to 166 MHz. Its LVTTL interface, single 3.3 V supply compatibility, and industry-temperature rating make it suitable for designs that require predictable synchronous memory behavior and configurable performance.

This device is a practical choice for engineers needing a compact, standard-interface SDRAM with selectable CAS latency and burst configurations, integrated refresh and power-management features, and multiple package options for board-level integration.

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