IM1216SDBATG-6I

The IM1216SDBATG-6I is a 128Mbit synchronous DRAM organized as 8M × 16 (4 banks × 2Mbit × 16) designed for high-speed, system-clock referenced memory applications. It provides a single 3.3 V supply (3.0 V–3.6 V) with an LVTTL interface and supports a 166 MHz system clock (‑6 speed grade) with programmable CAS latency options.

Housed in a 54‑pin TSOP‑II package and specified for industrial temperatures (‑40°C to 85°C TA), the device is suitable for embedded systems requiring synchronous burst transfers, flexible burst configuration and standard SDRAM control features such as auto/self refresh and power‑down modes.

Key Features

• Memory Architecture – 8M × 16 organization implemented as 4 banks × 2Mbit × 16, enabling interleaved bank operation for higher random access throughput.
• Performance – System frequency 166 MHz (‑6 speed grade) with clock access time tAC = 5 ns at CAS latency 3 and an access time of 5 ns listed in the specifications.
• Programmable Timing & Burst – Programmable CAS latency (2, 3), programmable wrap sequence (Sequential or Interleave) and programmable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave).
• Synchronous Interface – Full synchronous DRAM with all signals referenced to the rising edge of an external clock; LVTTL-compatible interface for control and data signals.
• Refresh & Power Management – Auto Refresh, Self Refresh and Power Down modes with 4096 refresh cycles/64 ms refresh interval for memory integrity.
• Signal & Control Features – Data mask for read/write control, single-pulsed RAS interface, BA0/BA1 bank control and support for multiple burst read with single write operations.
• Package & Temperature – 54‑pin TSOP‑II (0.400", 10.16 mm width) package; industrial operating temperature range from ‑40°C to 85°C TA.
• Supply & I/O – Single 3.3 V nominal supply (3.0 V–3.6 V) with dedicated VDD/VDDQ and VSS/VSSQ pins and LDQM/UDQM data mask pins.

Unique Advantages

• Flexible Burst Modes: Programmable burst length and wrap sequencing let designers match transfer behavior to system access patterns, improving effective throughput for sequential and interleaved workloads.
• Selectable CAS Latency: CAS latency options (2 or 3) provide timing flexibility for different system clocking and performance tradeoffs.
• Standard LVTTL Interface: LVTTL signaling and full synchronous operation simplify integration into systems that use common logic-level clocked memory interfaces.
• Industrial Temperature Rating: Specified for ‑40°C to 85°C TA, enabling use in temperature-critical embedded environments.
• Compact TSOP‑II Package: 54‑pin TSOP‑II offers a small PCB footprint while retaining full SDRAM functionality and signal access.

Why Choose IM1216SDBATG-6I?

The IM1216SDBATG-6I positions itself as a straightforward, clock‑synchronous memory option for designs needing 128 Mbit of SDRAM with programmable burst and timing features. Its 166 MHz speed grade, selectable CAS latencies and standard LVTTL interface make it suitable for embedded systems where predictable, clocked DRAM behavior and industrial temperature operation are required.

This device is appropriate for engineers seeking a compact TSOP‑II packaged SDRAM with built‑in refresh, power‑down and self‑refresh control to maintain data integrity and simplify memory management in systems constrained by board space and environmental range.

Request a quote or submit an RFQ to begin procurement for the IM1216SDBATG-6I and confirm availability and lead times for your design needs.