 | N/A | IS21EF08GP-JQLI-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 530 | |
 | | IS21ES08GA-JCLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 406 | |
 | | IS21ES08GA-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 961 | |
 | | IS21ES08GA-JQLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,941 | |
 | | IS21ES08GA-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,480 | |
 | N/A | IS21TF08G-JCLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 488 | |
 | N/A | IS21TF08G-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,177 | |
 | N/A | IS21TF08G-JQLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TC) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,061 | |
 | N/A | IS21TF08G-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 606 | |
 | | IS21TF32G-JCLI | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 425 | |
 | | IS21TF32G-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 327 | |
 | | IS21TF32G-JQLI | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,550 | |
 | | IS21TF32G-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,868 | |
 | | IS21TF64G-JCLI | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 252 | |
 | | IS21TF64G-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 153VFBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 181 | |
 | | IS21TF64G-JQLI | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 499 | |
 | | IS21TF64G-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 100LFBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 51 | |
 | N/A | IS22EF04GP-JCLA2 | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 50 | |
| N/A | N/A | IS22EF04GP-JCLA2-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 996 | |
 | N/A | IS22EF04GP-JQLA2 | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,654 | |