 | | AS4C64M8SC-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 204 | |
 | | AS4C64M8SC-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 881 | |
 | | AS4C64M8SD-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 854 | |
 | | AS4C64M8SD-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 264 | |
 | | AS4C8M16D1-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 1,667 | |
 | | AS4C8M16D1-5BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 431 | |
 | | AS4C8M16D1-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 1,196 | |
 | | AS4C8M16D1-5BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 15 ns | 830 | |
 | | AS4C8M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 742 | |
 | | AS4C8M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 511 | |
 | | AS4C8M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 450 | |
 | | AS4C8M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 50 | |
 | | AS4C8M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 450 | |
 | | AS4C8M16D1A-5TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 99 | |
 | | AS4C8M16D1A-5TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 234 | |
 | | AS4C8M16D1A-5TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 628 | |
 | | AS4C8M16S-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 2 ns | 539 | |
 | | AS4C8M16S-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 2 ns | 1,204 | |
 | | AS4C8M16S-6TAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,617 | |
 | | AS4C8M16S-6TANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 657 | |