 | | AS4C8M16S-6TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 116 | |
 | | AS4C8M16S-6TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1 | |
 | | AS4C8M16S-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 449 | |
 | | AS4C8M16S-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 319 | |
 | | AS4C8M16S-7BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 2 ns | 975 | |
 | | AS4C8M16S-7BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 2 ns | 888 | |
 | | AS4C8M16S-7TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 203 | |
 | | AS4C8M16S-7TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 858 | |
 | | AS4C8M16SA-6BAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 12 ns | 438 | |
 | | AS4C8M16SA-6BANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 12 ns | 129 | |
 | | AS4C8M16SA-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 12 ns | 639 | |
 | | AS4C8M16SA-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 12 ns | 527 | |
 | | AS4C8M16SA-6TAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 665 | |
 | | AS4C8M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 730 | |
 | | AS4C8M16SA-6TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 677 | |
 | | AS4C8M16SA-6TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 450 | |
 | | AS4C8M16SA-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 944 | |
 | | AS4C8M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,385 | |
 | | AS4C8M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 14 ns | 511 | |
 | | AS4C8M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 14 ns | 1,056 | |