Suntsu’s DRAM memory catalog offers high-performance volatile memory solutions for data-intensive computing, industrial automation, networking, and embedded systems. Whether you need high-speed DDR4, LPDDR, or legacy SDRAM chips, our extensive inventory helps engineers and purchasing managers secure reliable components with minimal lead times. Use our advanced part search tool to filter by density, speed, configuration, or manufacturer to find the exact DRAM solution that will keep your production line running smoothly.
DRAM Memory
Total Products: 3,051
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | B3221XM3BDGVI-U | Kingston Technology | IC DRAM 32GBIT PAR 200FBGA | DRAM Memory | 200-FBGA (10x14.5) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2G x 16 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 505 | ||
 | C3222PM4CDGUIW-U | Kingston Technology | C3222PM4CDGUIW-U | DRAM Memory | 200-FBGA (10x14.5) | N/A | -40°C ~ 95°C | Access Time: 3.5 ns Clock Frequency: 1.86 GHz Grade: Automotive Memory Format: DRAM Memory Interface: N/A Memory Organization: 1G x 16 Memory Size: 32 Gbit Memory Type: N/A Packaging: 200-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 814 | ||
| N/A | N/A | EDFB164A1MA-GD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 595 | |
| N/A | N/A | EDFB164A1MA-GD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 430 | |
| N/A | N/A | EDFB164A1MA-JD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,101 | |
| N/A | N/A | EDFB164A1MA-JD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,195 | |
| N/A | N/A | EDFB232A1MA-GD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 780 | |
| N/A | N/A | EDFB232A1MA-GD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 471 | |
| N/A | N/A | EDFB232A1MA-JD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 749 | |
| N/A | N/A | EDFB232A1MA-JD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,147 | |
| N/A | EMC643SP16CKDT-70LFx | Jeju Semiconductor Corporation | A/D Mux CRAM1.5-ver. Sync-Burst | DRAM Memory | 49-BGA (4x4mm) | 1.8V | -30°C - 85°C | Access Time: 70 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: RAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Technology: CRAM | 934 | ||
| N/A | EMC643SP16CKx | Jeju Semiconductor Corporation | A/D Mux CRAM1.5-ver. Sync-Burst | DRAM Memory | Die | 1.8V | -30°C - 85°C | Access Time: 70 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: RAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Technology: CRAM | 1,535 | ||
| N/A | EMD28164PCH-60x | Jeju Semiconductor Corporation | 128Mb Mobile LPDDR SDRAM, x16, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | -30°C - 85°C | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Extended Memory Format: RAM Memory Interface: LPDDR Memory Organization: x16 Memory Size: 128 Mbit Memory Type: Volatile Technology: SDRAM - Mobile LPDDR | 1,462 | ||
| N/A | EMD56164PBH-60x | Jeju Semiconductor Corporation | 256 Mbit Mobile LPDDR SDRAM, x16, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | -30°C - 85°C | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Extended Memory Format: RAM Memory Interface: LPDDR Memory Organization: x16 Memory Size: 256 Mbit Memory Type: Volatile Technology: SDRAM - Mobile LPDDR | 1,115 | ||
| N/A | EMD56164PCH-60x | Jeju Semiconductor Corporation | 256 Mbit Mobile LPDDR SDRAM, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | -30°C - 85°C | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Extended Memory Format: RAM Memory Interface: LPDDR Memory Organization: x16 Memory Size: 256 Mbit Memory Type: Volatile Technology: SDRAM - Mobile LPDDR | 1,978 | ||
 | H54G46CYRBX267 | SK Hynix | 2GB LPDDR4/LPDDR4X 4266Mbps Commercial | DRAM Memory | 200-FBGA (10×15) | 0.57V ~ 1.95V | −25°C – 85°C | Memory Size: 2 GB Clock Frequency: 2133 MHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR4/LPDDR4X Memory Organization: 2 × 512M × 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 200-FBGA | 8,834 | ||
| H54G46CYRVX267 | SK Hynix | 2GB LPDDR4X 4266Mbps Automotive | DRAM Memory | 200-FBGA (10×15) | 0.57V ~ 1.95V | −40°C – 95°C | Memory Size: 2 GB Clock Frequency: 2133 MHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR4X Memory Organization: 2 × 512M × 16 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 200-FBGA | 3,952 | ||
 | IM1216SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 8MX16, 166MH | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,044 | ||
 | IM1216SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 8MX16, 166MH | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,428 | ||
 | IM1232SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 4MX32, 166MH | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 4M x 32 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 238 |
About DRAM Memory
Dynamic Random-Access Memory (DRAM) is a type of high-density, volatile semiconductor memory designed for quick data access and low-latency processing. It requires a continuous power supply and a dynamic refresh cycle to maintain stored information. DRAM serves as the primary working memory in digital systems, enabling microprocessors and microcontrollers to efficiently read and write active data. The DRAM category encompasses various generations and form factors, including standard DDR SDRAM, low-power LPDDR for energy-sensitive mobile devices, and legacy DDR2 or DDR3 variants that are customized for long-lifecycle industrial applications.
Engineers evaluate key performance metrics when specifying DRAM chips, including clock speed, data rate, bus width, and operating temperature range, in order to maximize system throughput. These memory integrated circuits (ICs) are essential components in enterprise computing, telecommunications infrastructure, automotive infotainment, and industrial automation. Suntsu offers a comprehensive selection of reliable DRAM solutions that seamlessly integrate with advanced processors, field-programmable gate arrays (FPGAs), and other complementary memory components, ensuring optimal performance in demanding digital designs.
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