AS4C32M16D2C-25BCN

IC DRAM 512MBIT SSTL 18 84FBGA
Part Description

IC DRAM 512MBIT SSTL 18 84FBGA

Quantity 586 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package84-FBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time400 psGradeCommercial (Extended)
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceSSTL_18Memory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of AS4C32M16D2C-25BCN - 512Mbit DDR2 SDRAM Memory Module

The AS4C32M16D2C-25BCN from Alliance Memory is a 512-megabit DDR2 SDRAM memory IC designed for high-performance applications requiring fast data access and reliable operation. Built on proven DDR2 technology with a 32M x 16 memory organization, this device operates at 400MHz clock frequency and delivers 2.5ns access time. Ideal for commercial and industrial designs, it provides a cost-effective memory solution that balances performance with power efficiency.

Key Features

  • High Density Memory Architecture - Configured as 32M x 16, providing 512 megabits of total memory capacity to support data-intensive operations while maintaining a compact footprint.
  • DDR2 SDRAM Technology - Delivers double data rate performance with 400MHz clock frequency and 2.5ns access time, enabling fast read and write operations for demanding applications.
  • SSTL_18 Interface - Uses industry-standard Stub Series Terminated Logic with 1.8V I/O signaling for high-speed, low-noise data transfer and reduced signal integrity issues.
  • Commercial Temperature Range - Operates reliably across 0°C to 85°C (case temperature), suitable for standard commercial and controlled industrial environments.
  • Compact 84-FBGA Package - Housed in an 8mm x 12.5mm fine-pitch ball grid array package, minimizing board space requirements while providing robust electrical performance.
  • Standard Power Supply - Requires 1.7V to 1.9V supply voltage, compatible with standard DDR2 power architectures and enabling straightforward integration into existing designs.

Typical Applications

  • Networking Equipment - This DDR2 SDRAM provides the high-speed buffering required in routers, switches, and network processors where fast packet processing and low latency are essential for maintaining network throughput.
  • Industrial Control Systems - Delivers reliable memory storage for programmable logic controllers (PLCs) and human-machine interfaces (HMIs) operating in commercial temperature ranges, ensuring consistent performance in factory automation environments.
  • Consumer Electronics - Supports set-top boxes, digital televisions, and multimedia devices that require moderate memory capacity with cost-effective performance for video buffering and processing tasks.
  • Embedded Computing Platforms - Provides system memory for single-board computers and embedded processors running operating systems or applications that benefit from DDR2's balance of speed and power consumption.
  • Test and Measurement Instruments - Enables data acquisition and waveform storage in oscilloscopes and analyzers where 400MHz operation and 512Mbit capacity support real-time signal capture and processing.

Unique Advantages

  • Proven DDR2 Technology: Leverages mature and well-established DDR2 SDRAM architecture, reducing integration risk and ensuring long-term availability for products with extended lifecycles.
  • Efficient Power Profile: DDR2's lower operating voltage compared to DDR1 reduces overall system power consumption, extending battery life in portable devices and lowering thermal management costs.
  • Simplified Board Design: Standard SSTL_18 interface and conventional 84-FBGA footprint enable straightforward PCB layout with established design rules and reference designs readily available.
  • Cost-Effective Memory Density: 512Mbit capacity provides sufficient memory for many applications without the premium cost of higher-density parts, optimizing bill of materials while meeting performance requirements.
  • Fast Write Cycle Performance: 15ns write cycle time supports rapid data updates essential for buffering applications and real-time systems that frequently refresh stored information.
  • Active Lifecycle Status: Currently active product ensures ongoing supply availability and manufacturer support for new designs and production continuity.

Why Choose AS4C32M16D2C-25BCN?

This DDR2 SDRAM memory IC is positioned for design teams seeking reliable, standardized memory solutions that deliver proven performance without unnecessary complexity. Engineers working on networking infrastructure, industrial control systems, or embedded computing platforms will appreciate the device's straightforward integration, established ecosystem of controllers and supporting components, and predictable electrical characteristics. The 0°C to 85°C operating range covers most commercial applications, while the compact 84-FBGA package conserves valuable board area.

Beyond immediate technical specifications, the AS4C32M16D2C-25BCN offers long-term value through its active lifecycle status and Alliance Memory's focus on memory products. For designs requiring moderate memory capacity with DDR2's balanced performance and power profile, this component provides a dependable foundation that simplifies development, reduces risk, and supports sustained production over extended product lifetimes.

Get Started Today

Ready to integrate the AS4C32M16D2C-25BCN into your next design? Contact our technical sales team to request detailed specifications, pricing information, or application support. We're here to help you evaluate how this DDR2 SDRAM fits your specific requirements and can provide samples for prototyping and validation testing.

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