IS42S32200C1-7BL

The IS42S32200C1-7BL is a 64‑Mbit synchronous DRAM organized as 2M × 32 with a quad‑bank architecture for improved throughput. It is a fully synchronous, parallel SDRAM designed for 3.3V memory systems and supports high‑speed burst read/write operations with programmable timing and refresh modes.

This device is intended for systems requiring compact, parallel SDRAM in a 90‑ball LFBGA (13×8) package, offering selectable burst length and CAS latency to match a range of synchronous memory system requirements.

Key Features

• Memory Architecture 64 Mbit DRAM organized as 2M × 32 with 4 internal banks to enable interleaved access and hide row precharge latency.
• Performance Fully synchronous SDRAM with clock frequency support including 143 MHz and access times down to 5.5 ns (CAS latency = 3).
• Programmable Burst and Latency Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); CAS latency programmable to 2 or 3 clocks.
• Refresh and Power Modes Auto refresh and self‑refresh modes with 4096 refresh cycles every 64 ms; includes power‑down capability.
• Interface and Signaling LVTTL‑compatible inputs/outputs and parallel memory interface for integration into conventional 3.3V designs.
• Supply and Timing Single‑supply operation with VCC range 3.15 V to 3.45 V; key timing parameters and access times specified for reliable synchronous operation.
• Package and Temperature Supplied in a 90‑LFBGA (90‑ball BGA, 13×8) package; operating temperature range 0°C to 70°C (TA).

Typical Applications

• 3.3V Memory Subsystems Drop‑in parallel SDRAM for systems designed around a 3.3V memory bus requiring 64 Mbit of synchronous DRAM.
• High‑speed Burst Buffers Use where burst read/write and programmable burst lengths improve sustained data transfer and buffering.
• Embedded and Board‑Level Memory Compact 90‑ball BGA package suitable for board designs that need a parallel SDRAM footprint with banked architecture.

Unique Advantages

• Quad‑bank Architecture: Internal bank structure enables bank interleaving to hide precharge time and improve effective throughput.
• Flexible Burst and Latency Control: Programmable burst lengths, burst sequence, and CAS latency (2 or 3) let designers tune performance for system timing.
• Synchronous LVTTL Interface: All signals referenced to the positive clock edge with LVTTL compatibility for straightforward integration into synchronous designs.
• Standard 3.3V Supply Range: Operates from 3.15 V to 3.45 V, matching common 3.3V memory systems and simplifying power supply design.
• Compact BGA Package: 90‑ball LFBGA (13×8) package provides a small board footprint for space‑constrained applications.

Why Choose IS42S32200C1-7BL?

The IS42S32200C1-7BL delivers a synchronous, banked 64‑Mbit DRAM solution with programmable burst behavior and CAS latency options to match a range of parallel memory system requirements. Its LVTTL interface, single 3.3V supply range, and compact 90‑ball LFBGA package make it suitable for designs that need reliable, high‑speed burst access in a small form factor.

This device is well suited to engineers specifying 64‑Mbit parallel SDRAM for embedded and board‑level memory subsystems where predictable synchronous timing, refresh control, and compact packaging are priorities.

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