IS42S32200C1-7T

The IS42S32200C1-7T is a 64-Mbit synchronous DRAM organized as 2M × 32 with a quad-bank architecture for improved throughput. It is a fully synchronous, pipeline SDRAM designed for 3.3V memory systems and supports burst-oriented read/write operations with programmable burst length and sequence.

This device targets designs requiring parallel SDRAM with bank interleaving, synchronous burst capability, and a 400-mil 86-pin TSOP II package footprint. The device supports LVTTL signaling and operates over a 3.15V–3.45V supply range.

Key Features

• Core Architecture Quad-bank synchronous DRAM with internal bank interleaving to hide row precharge and improve seamless random-access performance.
• Memory Organization & Size 64 Mbit total capacity organized as 2M × 32, providing parallel 32-bit data width.
• Synchronous Interface Fully synchronous operation with all signals referenced to the positive clock edge; LVTTL-compatible I/O.
• Performance Clock frequency up to 143 MHz for the -7 speed grade and access times down to 5.5 ns (CAS latency = 3).
• Programmable Burst & Latency Programmable burst lengths (1, 2, 4, 8, full page), burst sequence (sequential/interleave), and CAS latency options (2 or 3 clocks).
• Refresh & Power Modes Auto-refresh and self-refresh support with 4096 refresh cycles every 64 ms and power-down capability to reduce active power.
• Power Supply Single 3.3V power supply operation; specified supply range 3.15 V to 3.45 V.
• Package Available in a 86-pin TSOP II (400-mil, 10.16 mm width) package (Supplier device package: 86-TSOP II).
• Operating Range Commercial operating temperature range of 0°C to 70°C (TA) for the -7T variant.

Typical Applications

• 3.3V memory subsystems Use as parallel SDRAM in systems designed around a single 3.3V supply and LVTTL interface.
• High-speed buffer memory Burst read/write capability and bank interleaving suit applications needing sustained sequential data transfers.
• Embedded systems with parallel SDRAM Fits designs requiring a 64-Mbit parallel memory in a 86-TSOP II footprint.

Unique Advantages

• Quad-bank interleaving: Internal bank architecture hides precharge time and enables more efficient random-access and burst operations.
• Flexible burst control: Programmable burst lengths and sequences let designers tailor memory transfer patterns to system throughput needs.
• Programmable CAS latency: Selectable CAS = 2 or 3 clocks to balance latency and clock frequency for target system timing.
• Industry-standard packaging: 86-pin TSOP II footprint (400-mil) simplifies integration into existing board layouts requiring parallel SDRAM.
• Self-refresh and auto-refresh: Built-in refresh modes reduce system-level refresh management and support low-power standby.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS42S32200C1-7T provides a synchronous, burst-capable 64-Mbit SDRAM solution in a compact 86-TSOP II package, combining programmable timing, bank interleaving, and LVTTL interface compatibility. Its support for a single 3.3V supply and a defined commercial temperature range makes it suitable for designs that require parallel SDRAM with predictable timing and integration characteristics.

This device is appropriate for engineers specifying 64-Mbit parallel SDRAM where configurable burst behavior, selectable CAS latency, and package compatibility are key selection criteria. The IS42S32200C1-7T offers a clear, verifiable feature set for system memory designs that must balance performance and board-level integration.

Request a quote or contact sales to discuss availability, lead times, and how the IS42S32200C1-7T can fit your design requirements.