IS42S32200C1-7TI

The IS42S32200C1-7TI is a 64‑Mbit synchronous DRAM organized as 524,288 × 32‑bit × 4 banks, delivering high‑speed, burst‑oriented memory access in a single 3.3 V memory device. It uses a fully synchronous pipeline architecture with registered inputs and outputs and an LVTTL interface for predictable timing.

Designed for 3.3 V memory systems, the device supports programmable burst lengths and sequences, internal bank interleaving to hide precharge time, and self‑refresh modes, and is available in a 86‑pin TSOP II package with an industrial operating temperature range.

Key Features

• Memory Core  64 Mbit SDRAM organized as 524,288 × 32 × 4 banks (quad‑bank) for concurrent bank operation and improved throughput.
• Performance  Clock frequency up to 143 MHz for the -7TI grade and pipeline architecture to support high‑speed, burst data transfers.
• Timing and Burst Control  Programmable burst length (1, 2, 4, 8, full page), selectable burst sequence (sequential/interleave), and programmable CAS latency (2 or 3 clocks).
• Interface  Fully synchronous operation with LVTTL‑compatible inputs and outputs; all signals referenced to the rising edge of CLK for deterministic timing.
• Power  Single 3.3 V power supply operation (specified supply range 3.15 V to 3.45 V) with power‑down and self‑refresh modes to support power management.
• Refresh and Reliability  Supports AUTO REFRESH and self‑refresh; 4096 refresh cycles every 64 ms to maintain data integrity.
• Package & Temperature  Supplied in a 86‑TFSOP (86‑TSOP II, 0.400", 10.16 mm width) package and specified for -40 °C to 85 °C ambient operating temperature; available in industrial temperature grade and lead‑free variants.

Typical Applications

• 3.3 V memory subsystems  For systems that require a 64‑Mbit synchronous DRAM using a single 3.3 V supply and LVTTL interface.
• High‑speed burst buffering  For designs that use programmable burst lengths and bank interleaving to sustain high data throughput.
• Systems needing self‑refresh capability  For equipment that benefits from AUTO REFRESH and self‑refresh modes to preserve data during low‑power states.
• Industrial temperature designs  For applications requiring extended ambient temperature support (‑40 °C to 85 °C).

Unique Advantages

• Quad‑bank architecture: Internal bank structure hides row precharge and enables interleaved access for improved effective throughput.
• Programmable timing and bursts: Selectable CAS latency and burst length/sequence let designers tune memory behavior for specific system timing and data flow requirements.
• Synchronous pipeline interface: All signals referenced to CLK provide consistent, clocked operation ideal for synchronous system designs.
• Power management modes: Self‑refresh and power‑down functions help reduce power during idle periods while maintaining data retention where required.
• Industrial package and temperature range: 86‑TSOP II packaging and ‑40 °C to 85 °C rating support deployment in temperature‑sensitive environments.
• Supply voltage tolerance: Specified operating range of 3.15 V to 3.45 V for reliable operation in 3.3 V memory systems.

Why Choose IS42S32200C1-7TI?

The IS42S32200C1-7TI positions itself as a practical, synchronous 64‑Mbit DRAM option for 3.3 V systems that require predictable, high‑speed burst transfers and flexible timing control. Its quad‑bank organization, programmable burst and CAS options, and synchronous pipeline architecture make it suitable for designs that need deterministic memory behavior and efficient bank interleaving.

With industrial temperature availability, self‑refresh capabilities, and standard 86‑TSOP II packaging, the IS42S32200C1-7TI offers a balance of performance, configurability, and environmental tolerance for embedded and system memory applications.

Request a quote or submit a product inquiry for the IS42S32200C1-7TI to receive pricing and availability information specific to your requirements.