IS42S32200C1-7BLI-TR

The IS42S32200C1-7BLI-TR is a 64‑Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc. It uses a quad‑bank, fully synchronous architecture and is designed for high‑speed parallel memory applications requiring burst access and predictable timing.

Typical use cases include embedded systems and memory subsystems where a 3.3V single‑supply SDRAM with programmable burst and CAS options, industrial temperature range, and a compact 90‑ball BGA package are required.

Key Features

• Memory Architecture — 64‑Mbit SDRAM organized as 512K × 32 × 4 banks (524,288 bits × 32 bits × 4 banks) for quad‑bank operation and improved throughput.
• Synchronous SDRAM & Clocking — Fully synchronous operation with all signals referenced to the rising clock edge. Available clock frequencies include 183, 166 and 143 MHz; this part is the 143 MHz (‑7) speed grade.
• Timing and Latency — Programmable CAS latency (2 or 3 cycles). For the ‑7 grade with CAS = 3, access time from clock is 5.5 ns and CAS latency corresponds to a 5.5 ns cycle time in that mode.
• Burst and Access Modes — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave). Supports burst read/write and burst read/single write operations with burst termination and auto precharge options.
• Refresh and Power — Self‑refresh and AUTO REFRESH modes supported with 4,096 refresh cycles every 64 ms; includes a power‑down mode for reduced power during idle periods.
• Interface and Signal Levels — LVTTL compatible inputs and outputs for standard parallel SDRAM interfaces.
• Supply Voltage — Single 3.3V power supply; operating supply range specified as 3.15 V to 3.45 V.
• Temperature and Packaging — Industrial temperature availability; specified operating temperature range −40°C to 85°C. Supplied in a 90‑LFBGA / 90‑ball BGA (13 × 8) package.

Typical Applications

• Embedded Memory Subsystems — Used as main or auxiliary SDRAM in embedded controllers and modules that require synchronous burst reads/writes and predictable timing.
• Consumer and Industrial Electronics — Fits applications needing a 3.3V SDRAM in an industrial temperature range, such as networking devices, instrumentation, and control systems.
• Buffering and Data Streaming — Suited for buffering and burst data transfer tasks where programmable burst lengths and interleaved bank access improve throughput.

Unique Advantages

• Quad‑bank Architecture: Internal four‑bank organization enables bank interleaving to hide precharge time and facilitate high‑throughput burst accesses.
• Programmable Burst and CAS Options: Flexible burst length, burst sequence and CAS latency selections let designers tune performance vs. latency for their system needs.
• Industrial Temperature Range: Specified operation from −40°C to 85°C supports deployment in industrial and harsh environments.
• Compact BGA Package: 90‑ball BGA (13 × 8) offers a small footprint for space‑constrained PCBs while supporting high pin density for parallel SDRAM interfaces.
• Self‑Refresh and Power‑Down Modes: Built‑in refresh and low‑power modes help manage power consumption during idle periods without external intervention.

Why Choose IC DRAM 64MBIT PAR 90BGA?

The IS42S32200C1‑7BLI‑TR delivers a compact, industrial‑temperature SDRAM solution with synchronous, quad‑bank architecture and flexible burst/CAS programming suitable for embedded and system memory applications. Its 3.3V single‑supply operation and LVTTL interface simplify integration into existing parallel SDRAM designs.

This device is appropriate for designers seeking deterministic burst performance, selectable latency options, and a small BGA footprint for space‑sensitive boards, while maintaining refresh and power management features required in longer‑life industrial deployments.

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