IS42S32200C1-7TI-TR

The IS42S32200C1-7TI-TR is a 64‑Mbit synchronous DRAM organized as 524,288 × 32 × 4 banks (64‑Mbit total) implemented for parallel memory systems. It uses a fully synchronous pipeline architecture with a single 3.3 V supply and LVTTL I/O.

Designed for systems that require a compact parallel SDRAM solution, this device delivers programmable burst operation, internal bank interleaving to hide precharge, and industrial temperature availability for use in robust electronics designs.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal 4‑bank architecture and pipeline operation; all signals referenced to the rising clock edge.
• Memory Organization  Organized as 524,288 × 32 × 4 banks delivering 64 Mbit of volatile DRAM capacity.
• Performance / Timing  Supports clock frequencies of 183, 166, and 143 MHz (speed grades) with programmable CAS latency of 2 or 3 clocks; access time values included per timing grade.
• Burst & Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports random column address every clock cycle during burst.
• Refresh & Power Modes  Auto refresh and self‑refresh modes with 4096 refresh cycles every 64 ms; includes power‑down capability.
• Interface & Signaling  LVTTL compatible inputs/outputs and parallel memory interface for direct integration into 3.3 V systems.
• Supply & Operating Range  Single‑supply operation: 3.15 V to 3.45 V. Operating temperature range: −40°C to 85°C (TA).
• Package  Available in 86‑pin TSOP II (86‑TFSOP/400 mil, 10.16 mm width) and other package options noted in the device family.
• Additional Features  Burst termination, auto precharge option, and the ability to precharge one bank while accessing others to improve access efficiency.

Typical Applications

• Industrial Control & Instrumentation  Industrial temperature availability (−40°C to 85°C) supports memory needs in industrial electronic systems.
• Parallel SDRAM Systems  Use as a 64‑Mbit parallel memory for designs that require synchronous burst reads/writes and LVTTL signaling.
• Embedded Memory Expansion  Suitable for embedded designs needing a compact TSOP II packaged DRAM with programmable burst and CAS timing options.

Unique Advantages

• Flexible Timing Options: Programmable CAS latency (2 or 3) and multiple clock frequency grades allow designers to match timing to system requirements.
• Higher Throughput via Bank Interleaving: Quad‑bank architecture and internal bank hiding reduce precharge delays and support continuous burst transfers.
• Compact Package Choice: 86‑pin TSOP II (400‑mil, 10.16 mm width) provides a space‑efficient form factor for board designs requiring parallel DRAM.
• Robust Operating Range: Single 3.3 V supply with a specified 3.15 V–3.45 V range and industrial temperature support improves applicability across varied operating environments.
• Power and Refresh Management: Auto refresh, self‑refresh and power‑down modes help manage standby power and maintain data integrity during sleep intervals.

Why Choose IS42S32200C1-7TI-TR?

The IS42S32200C1-7TI-TR provides a synchronous, quad‑bank 64‑Mbit DRAM solution with programmable burst capabilities and selectable CAS latency to fit a range of parallel memory designs. Its combination of LVTTL interface, single 3.3 V supply operation, and bank interleaving supports efficient burst transfers and flexible timing integration.

This device is suited to designs that require a compact TSOP II packaged SDRAM with industrial temperature availability and standard refresh/power management features. It is a practical choice for engineers seeking a verifiable, specification‑driven memory component for systems that demand synchronous parallel DRAM functionality.

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