MT53E1G64D4SQ-046 AIT:A TR
| Part Description |
IC DRAM 64GBIT 2.133GHZ WFBGA |
|---|---|
| Quantity | 1,098 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT53E1G64D4SQ-046 AIT:A TR – IC DRAM 64Gbit 2.133GHz WFBGA
The MT53E1G64D4SQ-046 AIT:A TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It is organized as 1G × 64 with a clock frequency of 2.133 GHz and operates at a 1.1 V supply.
Designed and manufactured by Micron Technology Inc., this device targets systems requiring high-density, high-frequency DRAM with automotive-grade qualification and extended temperature capability for robust operation in demanding environments.
Key Features
- Memory Architecture Mobile LPDDR4 SDRAM organized as 1G × 64, providing a total memory density of 64 Gbit.
- High-Speed Operation Supports a clock frequency of 2.133 GHz for high-bandwidth memory access.
- Low-Voltage Supply Operates at a 1.1 V supply voltage to support low-power system designs.
- Automotive Qualification AEC-Q100 qualification and an automotive grade designation indicate suitability for automotive applications where this qualification is required.
- Extended Temperature Range Rated for operation from -40 °C to 95 °C (TC), enabling use in environments with wide temperature variation.
- Package Type Supplied in a WFBGA form factor as indicated by the product name for board-level integration.
Typical Applications
- Automotive Systems Use in automotive electronic modules that require AEC-Q100–qualified memory and extended temperature capability.
- In-vehicle Infotainment High-density LPDDR4 memory supports multimedia buffering and data throughput demands.
- Embedded and Mobile Platforms Mobile LPDDR4 architecture and low-voltage operation suit compact, power-sensitive embedded designs.
Unique Advantages
- High Memory Density: 64 Gbit total capacity enables large data buffers and memory-intensive applications without increasing part count.
- High Bandwidth: 2.133 GHz clock frequency provides elevated data throughput for performance-oriented designs.
- Low Power Operation: 1.1 V supply reduces power consumption compared with higher-voltage alternatives, supporting energy-sensitive systems.
- Automotive-Grade Reliability: AEC-Q100 qualification combined with a wide operating temperature range supports deployment in automotive environments.
- Compact Packaging: WFBGA form factor facilitates high-density board layouts for space-constrained designs.
Why Choose MT53E1G64D4SQ-046 AIT:A TR?
The MT53E1G64D4SQ-046 AIT:A TR balances high density and high-speed Mobile LPDDR4 performance with automotive-grade qualification and an extended temperature range, making it suitable for designs that require both bandwidth and environmental robustness. Its 1G × 64 organization and 1.1 V operation support integration into compact, power-conscious systems.
Manufactured by Micron Technology Inc., this device is aimed at engineers designing automotive, embedded, and mobile platforms that need verifiable operating parameters and AEC-Q100 qualification for reliable long-term operation.
Request a quote or contact sales to discuss pricing, availability, and lead times for the MT53E1G64D4SQ-046 AIT:A TR.
