MT53E1G64D4SQ-046 WT:A TR
| Part Description |
IC DRAM 64GBIT 2.133GHZ WFBGA |
|---|---|
| Quantity | 646 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT53E1G64D4SQ-046 WT:A TR – IC DRAM 64GBIT 2.133GHZ WFBGA
The MT53E1G64D4SQ-046 WT:A TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 technology. It is organized as 1G × 64 and supports 2.133 GHz clock operation with a 1.1 V supply.
Designed for LPDDR4 mobile memory applications, this device addresses designs that require high-frequency DRAM operation, a large memory density, and an operational temperature range from −30 °C to 85 °C.
Key Features
- Memory Core and Technology Mobile LPDDR4 SDRAM architecture implemented as volatile DRAM.
- Density and Organization 64 Gbit total capacity arranged as 1G × 64 for wide data-path memory configurations.
- High-Frequency Operation Rated for 2.133 GHz clock frequency to support high-rate memory transactions.
- Power 1.1 V supply voltage for device operation.
- Package Available in WFBGA package as indicated in the product designation.
- Operating Temperature Specified operating range of −30 °C to 85 °C (TC) for thermal margin in target systems.
Typical Applications
- Mobile memory subsystems — Used as LPDDR4 DRAM in mobile platform memory designs that require 2.133 GHz operation and 64 Gbit capacity.
- LPDDR4-equipped systems — Integration into systems designed around Mobile LPDDR4 technology where a 1G × 64 organization is needed.
- Temperature-sensitive deployments — Suited for systems that operate across a −30 °C to 85 °C range.
Unique Advantages
- High-frequency capability: 2.133 GHz clock rating supports elevated memory throughput requirements.
- Large memory capacity: 64 Gbit device density helps consolidate memory footprint in system designs.
- Wide data organization: 1G × 64 organization provides a full 64-bit data path for system integration.
- Low-voltage operation: 1.1 V supply supports power-sensitive LPDDR4 designs.
- Broad operating temperature: −30 °C to 85 °C rating supports deployment across varied thermal environments.
- Mobile LPDDR4 architecture: Specifically aligned to Mobile LPDDR4 system requirements and interfaces.
Why Choose IC DRAM 64GBIT 2.133GHZ WFBGA?
This MT53E1G64D4SQ-046 WT:A TR device positions itself as a high-density Mobile LPDDR4 DRAM option delivering 64 Gbit capacity, 2.133 GHz clock capability, and 1.1 V operation. Its 1G × 64 organization and WFBGA packaging make it suitable for designs that demand a wide data path and compact assembly.
Choose this device for system designs focused on LPDDR4 memory integration where a specific combination of speed, capacity, and temperature range is required. The straightforward specification set makes it applicable for LPDDR4-based memory subsystems in mobile-oriented platforms.
Request a quote or submit an inquiry to obtain pricing and availability for the MT53E1G64D4SQ-046 WT:A TR.
