MT53E1G64D8NW-046 WT:E
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 170 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E1G64D8NW-046 WT:E – 64 Gbit Mobile LPDDR4 DRAM, 2.133 GHz, FBGA
The MT53E1G64D8NW-046 WT:E is a volatile SDRAM memory device implementing Mobile LPDDR4 architecture with a 64 Gbit capacity in a 1G × 64 organization. It operates at a clock frequency of 2.133 GHz and uses a 1.1 V supply.
Designed for mobile and portable designs, this DRAM provides high data-rate memory in a compact FBGA package with an operating temperature range of −30°C to 85°C (TC), delivering a balance of performance and low-voltage operation for memory-dense applications.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture for volatile memory applications.
- Capacity 64 Gbit total memory size organized as 1G × 64 to support wide data-path configurations.
- Clock Frequency Operates at 2.133 GHz to support high data-rate memory access.
- Voltage 1.1 V supply voltage for reduced power consumption compared to higher-voltage memories.
- Temperature Range Rated for operation from −30°C to 85°C (TC) for use in environments within that thermal window.
- Package Type FBGA package format for surface-mount integration in compact system designs.
Typical Applications
- Mobile devices Used as high-bandwidth volatile memory in mobile device designs leveraging Mobile LPDDR4 technology.
- Portable electronics Suitable for handheld and portable products that require dense, low-voltage DRAM.
- Embedded memory subsystems Acts as primary DRAM storage in embedded systems and memory subsystems where a 1G × 64 organization is required.
Unique Advantages
- High data rate: 2.133 GHz clock frequency supports fast memory access for bandwidth-sensitive tasks.
- Low-voltage operation: 1.1 V supply reduces power draw compared with higher-voltage alternatives.
- High density: 64 Gbit capacity enables memory-dense system designs with fewer components.
- Wide data path organization: 1G × 64 organization provides a 64-bit data path for efficient data transfers.
- Extended operating temperature: Rated from −30°C to 85°C (TC) to support a range of environmental conditions.
Why Choose IC DRAM 64GBIT 2.133GHZ FBGA?
The MT53E1G64D8NW-046 WT:E positions itself as a high-density, high-data-rate Mobile LPDDR4 DRAM option that combines 64 Gbit capacity with 2.133 GHz operation and low-voltage (1.1 V) requirements. Its 1G × 64 organization and FBGA package make it suitable for compact, memory-intensive mobile and portable designs.
Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams seeking a balance of performance, density, and thermal operating range for integration into memory subsystems and embedded mobile products.
Request a quote or contact sales to discuss availability, lead times, and ordering for the MT53E1G64D8NW-046 WT:E.
