MT53E2G32D4DE-046 AAT:C

The MT53E2G32D4DE-046 AAT:C is a 64 Gbit volatile DRAM device implementing Mobile LPDDR4X SDRAM architecture in a 2G × 32 organization. It provides a parallel memory interface in a 200‑TFBGA (10×14.5) package and is specified for high-frequency operation and automotive-grade environments.

Designed for applications that require high-density, low-voltage memory with automotive qualification, the device delivers performance and thermal range suitable for demanding embedded and mobile system designs.

Key Features

• Memory Core 64 Gbit DRAM organized as 2G × 32, using Mobile LPDDR4X SDRAM technology for high-density memory integration.
• Performance Clock frequency up to 2.133 GHz with an access time of 3.5 ns and a write cycle time (word/page) of 18 ns, supporting high-throughput memory operations.
• Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to support energy-efficient system designs.
• Interface & Timing Parallel memory interface with LPDDR4X timing characteristics and specified access and cycle times for predictable behavior.
• Package 200‑TFBGA (10×14.5) package case offering a compact footprint for board-level integration.
• System Reliability & Qualification Automotive grade with AEC‑Q100 qualification and an operating temperature range of −40 °C to 105 °C (TC) for robust operation in harsh environments.
• Memory Format & Type Volatile DRAM memory format suitable for transient data storage in system memory subsystems.

Typical Applications

• Automotive Electronic Systems Use as high-density, automotive‑qualified DRAM for electronic control units and infotainment where AEC‑Q100 qualification and −40 °C to 105 °C operation are required.
• Mobile Devices Mobile LPDDR4X architecture makes the device suitable for handheld and portable systems requiring compact, low-voltage, high-throughput memory.
• High-Density Embedded Memory Subsystems Acts as a 64 Gbit parallel DRAM building block for embedded platforms that need large memory capacity in a compact package.

Unique Advantages

• High-density 64 Gbit capacity: Enables substantial memory storage in a single device for space-constrained designs.
• Automotive qualification (AEC‑Q100): Provides an explicit qualification level and wide operating temperature range for deployment in automotive electronics.
• Low-voltage operation: 1.06 V to 1.17 V supply range supports lower power consumption and compatibility with LPDDR4X system rails.
• High-frequency performance: 2.133 GHz clock frequency and 3.5 ns access time deliver the timing characteristics needed for high-throughput memory tasks.
• Compact 200‑TFBGA package: Small 10×14.5 mm footprint aids PCB space optimization while providing required pin count for parallel operation.
• Parallel interface organization: 2G × 32 memory organization simplifies integration into parallel memory architectures.

Why Choose IC DRAM 64GBIT PAR 200TFBGA?

The MT53E2G32D4DE-046 AAT:C combines mobile LPDDR4X architecture with a high-density 64 Gbit organization and automotive AEC‑Q100 qualification, positioning it for designs that require a balance of performance, power efficiency, and thermal robustness. Its specified clock frequency, access time, and low-voltage operation provide verifiable performance metrics for system architects.

This device is well suited to engineers and procurement teams building automotive and mobile systems that need compact, high-capacity DRAM with defined timing and operating ranges. The combination of package density, parallel interface, and automotive qualification supports long-term deployment in environments that demand reliability across temperature and voltage variations.

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