MT53E2G32D4DE-046 AIT:A TR

The MT53E2G32D4DE-046 AIT:A TR is a 64 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM technology with a 2G × 32 memory organization and parallel interface. It is supplied in a 200‑TFBGA (10 × 14.5 mm) package and is targeted at systems requiring high-density, high-speed memory in a compact form factor.

Designed and qualified for automotive use with AEC-Q100 qualification, the device delivers high clock performance (2.133 GHz), low-voltage operation (1.06–1.17 V), and an extended operating temperature range (−40 °C to 95 °C), making it suitable for embedded and automotive memory subsystems where performance and reliability are required.

Key Features

• Core & Memory Architecture 64 Gbit density organized as 2G × 32, using mobile LPDDR4X SDRAM technology optimized for parallel memory interfaces.
• Performance High-frequency operation at 2.133 GHz with an access time of 3.5 ns and a word-page write cycle time of 18 ns to support fast data throughput.
• Low-Voltage Operation Operates from 1.06 V to 1.17 V consistent with LPDDR4X low-power signaling and system power constraints.
• Reliability & Qualification AEC-Q100 qualified and specified as Automotive grade to meet application-level qualification requirements.
• Package Supplied in a 200‑TFBGA package (10 × 14.5 mm) for compact board-level integration.
• Operating Range Rated for −40 °C to 95 °C (TC) to support extended temperature applications.

Typical Applications

• Automotive systems — Memory for in-vehicle systems that require AEC-Q100 qualification and extended temperature range.
• Mobile and handheld devices — High-density LPDDR4X memory for compact platforms needing low-voltage operation and high clock rates.
• Embedded computing — Parallel memory subsystems in embedded designs that benefit from 2G × 32 organization and fast access times.

Unique Advantages

• High-density memory in a compact package: 64 Gbit capacity in a 200‑TFBGA (10 × 14.5 mm) footprint reduces board area for high-capacity designs.
• High-speed operation: 2.133 GHz clock and 3.5 ns access time enable rapid data transfers for bandwidth-sensitive applications.
• Low-voltage LPDDR4X technology: 1.06–1.17 V supply reduces system power consumption while maintaining performance.
• Automotive-grade qualification: AEC-Q100 qualification and −40 °C to 95 °C operating range support deployment in temperature-stressed environments.
• Deterministic timing: 18 ns write cycle time (word page) helps designers budget timing for parallel memory operations.

Why Choose IC DRAM 64GBIT PAR 200TFBGA?

The MT53E2G32D4DE-046 AIT:A TR positions itself as a high-density, high-performance LPDDR4X DRAM optimized for systems that require low-voltage operation, fast access, and automotive-level qualification. Its combination of 64 Gbit capacity, 2.133 GHz clock rate, and AEC-Q100 qualification makes it suitable for designers targeting reliable, compact memory subsystems in automotive and embedded applications.

This device is well suited for customers who need scalable memory capacity with deterministic timing and extended temperature support. The compact 200‑TFBGA package and LPDDR4X power envelope provide practical integration choices for space-constrained boards while supporting long-term system robustness.

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