MT53E2G32D4DE-046 AIT:A
| Part Description |
IC DRAM 64GBIT PAR 200TFBGA |
|---|---|
| Quantity | 284 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | 3.5 ns | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 200-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | N/A | HTS Code | N/A |
Overview of MT53E2G32D4DE-046 AIT:A – IC DRAM 64GBIT PAR 200TFBGA
The MT53E2G32D4DE-046 AIT:A is a 64 Gbit volatile DRAM implemented with mobile LPDDR4X SDRAM architecture in a parallel interface configuration. It offers a 2G × 32 memory organization, a 2.133 GHz clock frequency and design characteristics targeted for automotive use, with AEC-Q100 qualification and an extended operating temperature range.
This device is optimized for high-density memory applications requiring high-speed access and low-voltage operation, delivered in a 200-TFBGA (10 × 14.5 mm) package suitable for surface-mount integration.
Key Features
- Core / Architecture Mobile LPDDR4X SDRAM architecture with a parallel memory interface supporting a 2G × 32 organization.
- Memory Capacity 64 Gbit DRAM density providing high on-board memory capacity in a single device.
- Performance 2.133 GHz clock frequency with a 3.5 ns access time and 18 ns write cycle time (word page) for fast data access and transfer.
- Power Narrow supply voltage range of 1.06 V to 1.17 V to match low-voltage system designs.
- Reliability / Qualification AEC-Q100 qualification and an operating temperature range of −40°C to 95°C (TC) for temperature-extreme environments.
- Package 200-TFBGA surface-mount package (10 × 14.5 mm) for compact board-level integration.
- Memory Type Volatile DRAM formatted for parallel interface operation.
Unique Advantages
- High memory density: 64 Gbit capacity enables large memory footprints without multiple devices.
- High-speed operation: 2.133 GHz clock and 3.5 ns access time support demanding data throughput needs.
- Low-voltage operation: 1.06 V–1.17 V supply range supports power-sensitive system designs.
- Automotive-grade qualification: AEC-Q100 rating and −40°C to 95°C temperature range allow use in temperature-challenging environments.
- Compact surface-mount package: 200-TFBGA (10 × 14.5 mm) reduces PCB area for space-constrained designs.
Why Choose IC DRAM 64GBIT PAR 200TFBGA?
The MT53E2G32D4DE-046 AIT:A combines high density, high-speed LPDDR4X SDRAM architecture and a compact 200-TFBGA package to address designs that require significant on-board memory and fast access times. Its low-voltage operation and AEC-Q100 qualification make it suitable for systems that demand both power efficiency and automotive-grade reliability.
Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying high-capacity, high-performance DRAM in environments requiring extended temperature operation and automotive qualification.
If you need pricing, availability, or a formal quote for the MT53E2G32D4DE-046 AIT:A, please request a quote or contact sales to discuss your requirements and lead times.
