MT53E2G32D4DE-046 AAT:A

The MT53E2G32D4DE-046 AAT:A is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4X SDRAM technology with a parallel memory interface. It delivers high-density DRAM configured as 2G × 32 and is specified with a 2.133 GHz clock frequency and 3.5 ns access time for demanding memory throughput.

Designed and qualified for automotive use (AEC-Q100), the device operates across an extended temperature range of −40°C to 105°C and is supplied in a 200-TFBGA (10×14.5) package. Voltage supply is specified at 1.06 V to 1.17 V, with a write cycle time (word page) of 18 ns.

Key Features

• Memory Core — 64 Gbit DRAM organized as 2G × 32 using Mobile LPDDR4X SDRAM technology for high-density volatile storage.
• Performance — 2.133 GHz clock frequency and 3.5 ns access time deliver fast memory transactions; write cycle time (word page) is 18 ns.
• Interface — Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
• Power — Specified operating voltage range of 1.06 V to 1.17 V.
• Reliability & Qualification — AEC-Q100 qualification and an operating temperature range of −40°C to 105°C support use in temperature-challenging environments; device grade is Automotive.
• Package — Supplied in a 200-TFBGA package (10×14.5) for compact board-level integration.

Typical Applications

• Automotive systems — Automotive-grade qualification (AEC-Q100) and extended temperature range make this DRAM suitable for in-vehicle controllers and infotainment platforms requiring high-density volatile memory.
• Mobile-class designs — Mobile LPDDR4X SDRAM technology and a 2.133 GHz clock frequency align with high-throughput mobile and portable applications that need dense memory arrays.
• High-density embedded memory — 64 Gbit capacity in a 200-TFBGA package supports embedded systems where board space and memory density are critical.

Unique Advantages

• High memory density: 64 Gbit capacity organized as 2G × 32 provides substantial volatile storage in a single device footprint.
• Qualified for automotive use: AEC-Q100 qualification and a −40°C to 105°C operating range support deployment in temperature-sensitive automotive applications.
• Deterministic performance: 2.133 GHz clock rate, 3.5 ns access time, and 18 ns write cycle time (word page) enable predictable memory timing for system designers.
• Compact packaging: 200-TFBGA (10×14.5) package enables high-density board integration while maintaining automotive-grade robustness.
• Controlled supply range: Narrow voltage supply specification (1.06 V to 1.17 V) provides clear power requirements for system power budgeting.

Why Choose MT53E2G32D4DE-046 AAT:A?

The MT53E2G32D4DE-046 AAT:A combines high-density 64 Gbit Mobile LPDDR4X DRAM architecture with automotive-grade qualification and defined performance metrics, making it appropriate for designs that require substantial volatile memory capacity with clear timing and voltage specifications. Its 200-TFBGA packaging and extended temperature rating support compact, robust systems in automotive and mobile-class embedded applications.

For engineering and procurement teams focused on predictable performance, integration density, and qualification for temperature-challenging environments, this device provides a verifiable specification set that supports long-term system planning and deployment.

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