MT53E2G32D4DE-046 AAT:C TR

The MT53E2G32D4DE-046 AAT:C TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4X SDRAM architecture with a parallel interface. It delivers high-bandwidth memory organized as 2G × 32 and is supplied in a 200‑TFBGA (10 × 14.5 mm) package.

This device targets designs that require high clock rates, low access latency and robust environmental performance, including applications demanding AEC‑Q100 qualification and extended temperature operation.

Key Features

• Memory Architecture  64 Gbit density organized as 2G × 32 in Mobile LPDDR4X SDRAM format, provided as parallel DRAM to support high data throughput.
• Performance  2.133 GHz clock frequency with a 3.5 ns access time and 18 ns write cycle time (word page), enabling fast data access and high bandwidth.
• Power  Narrow operating voltage range from 1.06 V to 1.17 V for the memory core.
• Package  200‑TFBGA package (10 × 14.5 mm) for surface mounting and compact system integration.
• Temperature & Reliability  Qualified to AEC‑Q100 and specified for operation from −40°C to 105°C (TC), supporting designs with extended temperature and reliability requirements.
• Interface  Parallel memory interface suitable for controllers and systems designed for LPDDR4X parallel DRAM implementations.

Typical Applications

• Automotive systems  AEC‑Q100 qualification and −40°C to 105°C range make this device suitable for automotive electronic modules requiring robust memory solutions.
• High‑performance mobile and embedded platforms  Mobile LPDDR4X architecture and 2.133 GHz clocking support high‑bandwidth embedded designs where compact, fast DRAM is required.
• High‑throughput data buffering  Low access time and parallel interface enable use as frame buffers or data buffers in systems that need rapid read/write cycles.

Unique Advantages

• AEC‑Q100 qualified: Explicit qualification for automotive reliability provides traceable suitability for designs that require automotive‑grade memory.
• High clock and low latency: 2.133 GHz clock frequency and 3.5 ns access time deliver measurable performance for bandwidth‑sensitive applications.
• Narrow core voltage range: 1.06 V to 1.17 V operation enables predictable power budgeting in systems designed around LPDDR4X cores.
• Compact TFBGA package: 200‑TFBGA (10 × 14.5 mm) provides a small footprint for space‑constrained PCB layouts while supporting surface mount assembly.
• Extended temperature capability: Specified operation from −40°C to 105°C (TC) supports deployment in thermally challenging environments.

Why Choose IC DRAM 64GBIT PAR 200TFBGA?

The MT53E2G32D4DE-046 AAT:C TR combines LPDDR4X architecture, high clocking, and low access latency with automotive‑grade qualification and extended temperature range, delivering a reliable high‑density memory option for demanding embedded and automotive systems. Its 200‑TFBGA package and parallel interface make it suitable for compact, high‑throughput designs that need predictable power and performance characteristics.

This device is appropriate for engineers and procurement teams specifying AEC‑Q100 qualified DRAM for applications that must balance bandwidth, latency, and environmental robustness while maintaining a compact PCB footprint.

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