MT53E2G32D4DE-046 AIT:C

The MT53E2G32D4DE-046 AIT:C is a 64 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM architecture with a parallel memory interface and 2G × 32 organization. It targets designs that require high-density, high-speed DRAM in a compact 200-TFBGA package.

Key attributes include a 2.133 GHz clock frequency, low-voltage operation (1.06 V–1.17 V), and AEC-Q100 qualification with an operating temperature range of −40°C to 95°C, making it suitable for demanding and temperature-variable environments.

Key Features

• Memory Core  64 Gbit DRAM organized as 2G × 32, provided as volatile memory for high-capacity data storage and buffering.
• Technology  SDRAM - Mobile LPDDR4X architecture to support high-density mobile-style DRAM implementations.
• Performance  Operates at a clock frequency of 2.133 GHz with an access time of 3.5 ns and a word-page write cycle time of 18 ns for fast read/write responsiveness.
• Power  Low-voltage operation across a 1.06 V to 1.17 V supply range to minimize power consumption in voltage-sensitive designs.
• Interface  Parallel memory interface optimized for integration into high-bandwidth memory subsystems.
• Package  200-TFBGA package (10 × 14.5 mm) for compact board-level integration.
• Temperature & Qualification  AEC-Q100 qualification and an operating temperature range of −40°C to 95°C (TC) to meet rigorous environmental requirements for critical applications.

Typical Applications

• Automotive Electronics  Memory for automotive systems requiring AEC-Q100 qualification and extended temperature operation.
• Mobile and Embedded Platforms  High-density LPDDR4X DRAM for compact mobile or embedded designs that need large volatile storage capacity.
• High-Capacity Memory Subsystems  Used where large parallel DRAM arrays are required for buffering, caching, or working memory.

Unique Advantages

• High Density (64 Gbit): Provides substantial on-board memory capacity in a single device to reduce component count for high-memory designs.
• High-Speed Operation: 2.133 GHz clock and 3.5 ns access time deliver fast memory responsiveness for bandwidth-sensitive tasks.
• Low-Voltage Efficiency: Operates between 1.06 V and 1.17 V to support lower power budgets in voltage-constrained systems.
• Automotive-Grade Qualification: AEC-Q100 qualification and −40°C to 95°C operating range support deployment in temperature-variable, reliability-focused environments.
• Compact Package: 200-TFBGA (10 × 14.5 mm) enables high-density board layouts while maintaining a standard ball-grid footprint.

Why Choose MT53E2G32D4DE-046 AIT:C?

The MT53E2G32D4DE-046 AIT:C combines high memory density and high-speed LPDDR4X SDRAM architecture with automotive-grade qualification, offering a balance of performance, compact packaging, and environmental robustness. Its specifications make it well suited for engineers designing high-capacity memory subsystems in automotive, mobile, and embedded applications that require reliable operation across a wide temperature range.

Manufactured by Micron Technology Inc., this device provides a clear, spec-driven option for projects that need scalable DRAM capacity, predictable timing characteristics, and low-voltage operation in a 200-TFBGA package.

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