MT53E2G32D4DE-046 WT:A
| Part Description |
IC DRAM 64GBIT PAR 200TFBGA |
|---|---|
| Quantity | 150 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | 3.5 ns | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 200-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E2G32D4DE-046 WT:A – 64 Gbit Parallel Mobile LPDDR4X DRAM, 200‑TFBGA
The MT53E2G32D4DE-046 WT:A is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4X SDRAM architecture. It provides a 2G × 32 memory organization with a parallel memory interface and is supplied in a 200‑TFBGA package.
Designed for mobile memory applications and board-level memory subsystems, the device delivers high clock rate operation and low-voltage operation to support compact, power-conscious system designs.
Key Features
- Memory Type & Technology Volatile DRAM implemented as Mobile LPDDR4X SDRAM, providing a parallel memory interface.
- Density & Organization 64 Gbit total capacity organized as 2G × 32.
- Performance 2.133 GHz clock frequency with 3.5 ns access time and an 18 ns write cycle time for word page operations.
- Power Low-voltage operation with a supply range of 1.06 V to 1.17 V.
- Package & Mounting 200‑TFBGA package (10 × 14.5 mm) suitable for board-level mounting; device delivered in a 200‑TFBGA package case.
- Operating Temperature Rated for −25 °C to 85 °C (TC).
Typical Applications
- Mobile Devices — Parallel LPDDR4X memory for handheld and portable electronics that require high-density memory in a compact package.
- Embedded Systems — Board-level DRAM for embedded platforms that need a 64 Gbit memory footprint with a parallel interface.
- Memory Subsystems — Integration into memory modules or subsystems where 200‑TFBGA mounting and low-voltage operation are required.
Unique Advantages
- High throughput operation: 2.133 GHz clock frequency supports fast data rates consistent with LPDDR4X performance expectations.
- Low access latency: 3.5 ns access time and an 18 ns write cycle time for word page operations enable responsive memory access.
- Low-voltage operation: 1.06 V to 1.17 V supply range reduces power consumption relative to higher-voltage DRAM options.
- Compact package footprint: 200‑TFBGA (10 × 14.5 mm) package supports high-density board designs and surface mounting.
- Wide operating temperature: −25 °C to 85 °C rating supports many commercial and industrial temperature environments.
Why Choose MT53E2G32D4DE-046 WT:A?
The MT53E2G32D4DE-046 WT:A positions itself as a high-density Mobile LPDDR4X DRAM solution that combines high clock performance, low access latency, and low-voltage operation in a compact 200‑TFBGA package. Its 2G × 32 organization and parallel interface make it suitable for designs that require a 64 Gbit memory footprint with board-level integration.
This device is appropriate for engineers designing mobile and embedded systems seeking a balance of speed, capacity, and power efficiency, and for applications where a small package and a wide operating temperature range are needed.
Request a quote or contact sales to check pricing, availability, and lead times for the MT53E2G32D4DE-046 WT:A.
