MT53E2G32D4DE-046 WT:A TR

The MT53E2G32D4DE-046 WT:A TR is a 64 Gbit volatile DRAM device implemented as Mobile LPDDR4X SDRAM with a parallel memory interface. It delivers high-density, high-frequency memory in a compact 200-TFBGA (10 × 14.5 mm) package for space-constrained system designs.

Targeted at mobile and embedded memory applications, the part combines up to 2G × 32 memory organization, a 2.133 GHz clock frequency, and low-voltage operation (1.06 V–1.17 V) to support high-throughput, power-conscious designs.

Key Features

• Memory Core & Organization  64 Gbit capacity organized as 2G × 32, providing high-density DRAM storage in a single device.
• Technology  Mobile LPDDR4X SDRAM architecture for parallel memory operation and mobile-oriented implementations.
• Performance  2.133 GHz clock frequency with an access time of 3.5 ns and a write cycle time (word page) of 18 ns to support high data-rate memory transactions.
• Power  Low-voltage supply range of 1.06 V to 1.17 V to reduce overall memory power consumption in low-voltage systems.
• Package  200-TFBGA package (10 × 14.5 mm) for compact board-level integration in space-constrained designs.
• Operating Temperature  Specified operating temperature range of −25°C to 85°C (TC) for deployment in a broad set of thermal environments.
• Interface  Parallel memory interface suitable for systems designed to leverage LPDDR4X parallel topology and timing.

Typical Applications

• Mobile devices  High-density LPDDR4X storage for smartphones, tablets, and other handheld devices requiring compact, high-throughput memory.
• Embedded computing  Memory for embedded systems and modules where 64 Gbit capacity and a small-package form factor are required.
• High-performance mobile computing  Use in designs that need multi-gigahertz clocking and fast access times to support demanding mobile workloads.

Unique Advantages

• High density in a single device: 64 Gbit (2G × 32) organization reduces board-level component count for systems needing large memory capacity.
• High-speed operation: 2.133 GHz clock frequency and 3.5 ns access time support high-bandwidth memory accesses.
• Low-voltage operation: 1.06 V–1.17 V supply range helps lower memory power consumption in energy-sensitive designs.
• Compact package: 200-TFBGA (10 × 14.5 mm) provides a small footprint for space-constrained boards and modules.
• Wide operating temperature: −25°C to 85°C (TC) rating accommodates a range of thermal environments without additional thermal derating details.

Why Choose MT53E2G32D4DE-046 WT:A TR?

The MT53E2G32D4DE-046 WT:A TR positions itself as a high-density, high-speed LPDDR4X DRAM option for designers who require compact packaging and low-voltage operation. Its combination of 64 Gbit capacity, 2.133 GHz clocking, and a 200-TFBGA footprint makes it suitable for mobile and embedded platforms where board space and power are constrained.

This device is appropriate for projects that need scalable memory capacity with verifiable timing characteristics and defined operating conditions. Sourcing this Micron Technology Inc. device supports designs that call for compact, high-throughput DRAM with specified supply and temperature ranges.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the MT53E2G32D4DE-046 WT:A TR.