MT53E2G32D4DT-046 AAT:A

IC DRAM 64GBIT 2.133GHZ FBGA
Part Description

IC DRAM 64GBIT 2.133GHZ FBGA

Quantity 952 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size64 GbitAccess TimeN/AGradeAutomotive
Clock Frequency2.133 GHzVoltage1.1VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)Write Cycle Time Word PageN/APackagingN/A
Mounting MethodVolatileMemory InterfaceN/AMemory Organization2G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNPENDING ECCNHTS Code0000.00.0000

Overview of MT53E2G32D4DT-046 AAT:A – IC DRAM 64GBIT 2.133GHZ FBGA

The MT53E2G32D4DT-046 AAT:A is a volatile DRAM device implementing mobile LPDDR4 SDRAM architecture. It provides a 64 Gbit memory capacity organized as 2G x 32 and operates at a clock frequency of 2.133 GHz with a 1.1V supply.

Designed for applications that require high-bandwidth, compact memory in demanding environments, this part is offered in an FBGA package and carries AEC-Q100 qualification for automotive-grade use. The device supports extended operating temperatures from -40°C to 105°C (TC).

Key Features

  • Core / Architecture Mobile LPDDR4 SDRAM architecture delivering high-speed DRAM performance targeted at compact memory subsystems.
  • Memory Capacity & Organization 64 Gbit total capacity organized as 2G × 32, suitable for designs requiring large density in a single device.
  • Data Rate Operates at a clock frequency of 2.133 GHz to support high-bandwidth memory operations.
  • Power Nominal supply voltage of 1.1V as specified for LPDDR4 operation.
  • Package Supplied in an FBGA package for compact board-level integration.
  • Automotive Qualification & Grade AEC-Q100 qualified and designated as Automotive grade, suitable for designs requiring industry-recognized qualification.
  • Operating Temperature Range Rated for -40°C to 105°C (TC) to support extended-temperature applications.

Typical Applications

  • Automotive Systems — Memory for automotive electronics where AEC-Q100 qualification and extended temperature capability are required.
  • Mobile Devices — High-density, high-frequency LPDDR4 memory for compact mobile and handheld platforms.
  • Embedded Systems — Large-capacity DRAM for embedded designs needing fast, volatile memory in constrained footprints.

Unique Advantages

  • High-density memory: 64 Gbit capacity in a single device reduces the need for multiple components to achieve large memory pools.
  • High data-rate operation: 2.133 GHz clock frequency supports demanding bandwidth requirements.
  • Low-voltage operation: 1.1V supply aligns with LPDDR4 power domains for system-level power considerations.
  • Automotive qualification: AEC-Q100 qualification and Automotive grade designation facilitate use in automotive-qualified designs.
  • Wide temperature range: Rated from -40°C to 105°C (TC) for reliable operation across extended environmental conditions.

Why Choose IC DRAM 64GBIT 2.133GHZ FBGA?

The MT53E2G32D4DT-046 AAT:A combines LPDDR4 architecture, high capacity, and high clock rate to meet designs that require compact, high-bandwidth volatile memory. With a 1.1V supply and FBGA packaging, it integrates into space-constrained systems while supporting system power requirements.

Its AEC-Q100 qualification and Automotive grade classification make it suitable for engineering teams developing products for automotive and other environments demanding extended temperature operation and recognized qualification standards. Backed by the Micron Technology Inc. product offering, this device addresses long-term deployment needs for high-density, high-speed memory.

Request a quote or contact sales to discuss availability, pricing, and technical support for the MT53E2G32D4DT-046 AAT:A.

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