MT53E2G32D4DT-046 AIT:A TR
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 35 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | PENDING ECCN | HTS Code | 0000.00.0000 |
Overview of MT53E2G32D4DT-046 AIT:A TR – IC DRAM 64GBIT 2.133GHZ FBGA
The MT53E2G32D4DT-046 AIT:A TR is a 64 Gbit mobile LPDDR4 SDRAM device organized as 2G × 32. It provides high-clock operation at 2.133 GHz and is supplied at 1.1 V for high-speed volatile memory applications.
Designed and qualified for automotive use, this device targets systems that require high-density, high-frequency volatile memory with extended temperature capability and AEC-Q100 qualification.
Key Features
- Memory Architecture Mobile LPDDR4 SDRAM organized as 2G × 32, delivering a 64 Gbit density for high-capacity memory requirements.
- High Clock Frequency Operates at 2.133 GHz clock frequency to support high-speed memory transactions.
- Power 1.1 V supply voltage for LPDDR4 operation.
- Automotive Qualification AEC-Q100 qualification and Automotive grade designation indicate suitability for automotive system integration.
- Operating Temperature Range Rated for −40°C to 95°C (TC), supporting extended temperature environments.
- Memory Type Volatile DRAM format intended for transient data storage in system memory subsystems.
Typical Applications
- Automotive electronics Use in in-vehicle systems where AEC-Q100 qualification and extended temperature range are required.
- Mobile platform designs Integration into mobile LPDDR4 architectures that need 64 Gbit density and 2.133 GHz operation.
- High-speed embedded systems Deployment where high-frequency volatile memory is needed for data buffering and fast transient storage.
Unique Advantages
- High-density memory 64 Gbit capacity supports designs that require large memory storage in a single device.
- High-frequency operation 2.133 GHz clock rate enables high-speed memory transactions appropriate for bandwidth-sensitive tasks.
- Low-voltage operation 1.1 V supply reduces power draw consistent with LPDDR4 requirements.
- Automotive-grade qualification AEC-Q100 qualification supports use in automotive designs with recognized component-level reliability screening.
- Wide temperature tolerance −40°C to 95°C (TC) rating provides headroom for deployments in demanding thermal environments.
Why Choose MT53E2G32D4DT-046 AIT:A TR?
The MT53E2G32D4DT-046 AIT:A TR combines 64 Gbit LPDDR4 density with 2.133 GHz operation and 1.1 V power to deliver a high-capacity, high-frequency volatile memory building block. Its AEC-Q100 qualification and −40°C to 95°C temperature rating position it for rugged, temperature-extreme system designs where automotive-grade components are required.
This device is suited to engineers and procurement teams specifying high-density LPDDR4 DRAM for automotive and mobile-influenced systems that demand predictable electrical characteristics, thermal tolerance, and industry-recognized qualification.
Request a quote or submit an inquiry to obtain pricing, availability, and technical support for the MT53E2G32D4DT-046 AIT:A TR.
