MT53E2G32D4NQ-046 WT:A
| Part Description |
IC DRAM 64GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 494 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E2G32D4NQ-046 WT:A – IC DRAM 64GBIT 2.133GHZ 200VFBGA
The MT53E2G32D4NQ-046 WT:A is a 64 Gbit volatile DRAM device implemented as mobile LPDDR4 SDRAM. It delivers a 2.133 GHz clock frequency in a compact 200‑VFBGA (10 × 14.5 mm) package for high-density memory applications.
This device is intended for designs requiring high-bandwidth, low-voltage volatile memory in a small footprint and supports operation across a broad temperature range for varied system environments.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM architecture providing volatile DRAM storage with a 64 Gbit capacity.
- Organization 2G × 32 memory organization, enabling the stated 64 Gbit density.
- Performance 2.133 GHz clock frequency for high data-rate operation.
- Power 1.1 V supply voltage specified for device operation.
- Package 200‑VFBGA package (10 × 14.5 mm) for compact board-level integration.
- Operating Temperature Specified temperature range −30 °C to 85 °C (TC).
Typical Applications
- Mobile memory subsystems — Used where LPDDR4 memory is required for compact, high-density mobile designs.
- High-bandwidth embedded systems — Provides volatile storage at 2.133 GHz clock rates for systems needing fast DRAM access.
- Compact module designs — 200‑VFBGA (10 × 14.5) package supports space-constrained board layouts.
Unique Advantages
- High-density memory — 64 Gbit capacity from a single device reduces the number of memory components required on a board.
- High clock rate — 2.133 GHz operation supports designs that need increased data throughput.
- Low-voltage operation — 1.1 V supply reduces power envelope compared with higher-voltage DRAM alternatives.
- Compact package — 200‑VFBGA (10 × 14.5 mm) form factor enables integration in space-limited systems.
- Wide operating temperature — −30 °C to 85 °C (TC) supports deployment across diverse thermal environments.
- Established manufacturer — Produced by Micron Technology Inc., providing a recognized supplier for memory components.
Why Choose IC DRAM 64GBIT 2.133GHZ 200VFBGA?
The MT53E2G32D4NQ-046 WT:A combines a 64 Gbit LPDDR4 memory core with a 2.133 GHz clock and 1.1 V operation in a compact 200‑VFBGA package, making it a focused choice for high-density, high-bandwidth mobile and embedded memory designs. Its specified operating temperature range supports deployment across a range of system environments.
This device is suited for engineers and designers who require high-capacity volatile memory in a small footprint and who value predictable, specification-driven performance backed by Micron Technology Inc.
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