MT53E2G32D4NQ-046 WT:C
| Part Description |
IC DRAM 64GBIT 2.133GHZ 200VFBGA |
|---|---|
| Quantity | 456 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 39 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-VFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B2A | HTS Code | 8542.32.0036 |
Overview of MT53E2G32D4NQ-046 WT:C – IC DRAM 64GBIT 2.133GHZ 200VFBGA
The MT53E2G32D4NQ-046 WT:C is a volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture with a 64 Gbit memory density. It delivers a 2.133 GHz clock frequency and is supplied at 1.1 V, targeting high-density, high-rate memory subsystems.
Packaged in a 200-VFBGA (10×14.5) form factor and specified for operation from −30°C to 85°C, this device is intended for designs that require compact, high-capacity LPDDR4 memory components.
Key Features
- Memory Type and Architecture Volatile DRAM implemented as SDRAM - Mobile LPDDR4, offering LPDDR4 architecture characteristics in a single-device form.
- Density 64 Gbit memory size organized as 2G × 32, supplying high-capacity DRAM in a single package.
- Data Rate 2.133 GHz clock frequency for high-rate data transfer within LPDDR4 system designs.
- Supply Voltage 1.1 V operating supply, consistent with mobile LPDDR4 voltage requirements.
- Package 200-VFBGA package (10×14.5 mm) for compact board-level integration.
- Operating Temperature Specified for −30°C to 85°C (TC), covering a broad commercial and industrial-operating range.
Typical Applications
- Mobile devices — Suited for mobile LPDDR4 memory subsystems where compact, high-density DRAM is required.
- High-bandwidth memory subsystems — Appropriate for designs that need 2.133 GHz clocking and 64 Gbit capacity in a single DRAM package.
- Space-constrained embedded systems — The 200-VFBGA (10×14.5) package supports integration in compact board layouts requiring elevated memory capacity.
Unique Advantages
- High memory density: 64 Gbit organization (2G × 32) consolidates large memory capacity into one component, reducing board-level BOM complexity.
- High data rate: 2.133 GHz clock frequency supports high-throughput memory operations for demanding data paths.
- Mobile LPDDR4 architecture: Built on Mobile LPDDR4 SDRAM technology to align with LPDDR4 system designs.
- Low-voltage operation: 1.1 V supply enables compatibility with LPDDR4 power domains and lower-voltage system designs.
- Compact package: 200-VFBGA (10×14.5) minimizes PCB area for high-density memory layout.
- Wide operating temperature: Rated from −30°C to 85°C for use across a broad range of operating environments.
Why Choose IC DRAM 64GBIT 2.133GHZ 200VFBGA?
The MT53E2G32D4NQ-046 WT:C from Micron Technology Inc. positions itself as a high-density, high-rate LPDDR4 memory device designed for compact systems that require 64 Gbit capacity at 2.133 GHz operation. Its 1.1 V supply and 200-VFBGA package make it suitable for integration into mobile and space-constrained memory subsystems.
This device is well suited for engineers and designers building LPDDR4-based memory solutions who need a single-package, high-capacity DRAM option with defined operating-temperature range and standardized package dimensions.
Request a quote or submit an inquiry for pricing and availability for the MT53E2G32D4NQ-046 WT:C.
