MT53E2G32D8QD-046 WT:E
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 579 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53E2G32D8QD-046 WT:E – IC DRAM 64GBIT 2.133GHZ FBGA
The MT53E2G32D8QD-046 WT:E from Micron Technology Inc. is a volatile mobile LPDDR4 SDRAM device providing 64 Gbit of DRAM capacity. It is organized as 2G × 32 and supports a clock frequency of 2.133 GHz with a 1.1 V supply.
This device is intended for designs that require high-density, high-speed mobile LPDDR4 memory with an extended operating temperature range, specified from -30°C to 85°C.
Key Features
- Memory Technology Mobile LPDDR4 SDRAM offering volatile memory storage tailored for high-speed mobile memory architectures.
- Capacity & Organization 64 Gbit total capacity, organized as 2G × 32 for wide data paths and high-density memory implementations.
- Data Rate Clock frequency rated at 2.133 GHz to support high-throughput memory operations.
- Power Low-voltage operation with a 1.1 V supply to support power-sensitive designs.
- Operating Temperature Specified operating temperature range from -30°C to 85°C for use in environments within this thermal window.
- Manufacturer Produced by Micron Technology Inc., identified by part number MT53E2G32D8QD-046 WT:E.
- Package Device designation indicates FBGA package format as part of the product name.
Typical Applications
- Mobile devices High-density LPDDR4 memory suitable for mobile device memory subsystems requiring 64 Gbit capacity.
- Handheld and portable electronics Low-voltage 1.1 V operation and compact FBGA packaging for space- and power-constrained portable designs.
- Embedded systems Provides high-speed volatile memory for embedded platforms operating within a -30°C to 85°C temperature range.
Unique Advantages
- High-density memory 64 Gbit capacity supports designs needing large volatile storage in a single device.
- High data-rate performance 2.133 GHz clock frequency enables higher throughput for data-intensive memory operations.
- Low-voltage operation 1.1 V supply reduces power draw compared with higher-voltage alternatives, beneficial for battery-powered designs.
- Extended operating temperature Rated for -30°C to 85°C to accommodate a range of environmental conditions within that span.
- Wide data organization 2G × 32 organization provides a wide data path suitable for high-bandwidth memory implementations.
Why Choose IC DRAM 64GBIT 2.133GHZ FBGA?
IC DRAM 64GBIT 2.133GHZ FBGA delivers a combination of high density, high clock-rate LPDDR4 technology and low-voltage operation from a recognized manufacturer, Micron Technology Inc. It is positioned for designs that require substantial volatile memory capacity and sustained data throughput while operating within the specified temperature range.
Designers targeting mobile and embedded platforms that need 64 Gbit of LPDDR4 memory will find this part suitable for consolidating memory capacity and maintaining performance with a 1.1 V supply and 2.133 GHz clock capability.
Request a quote or contact sales to discuss pricing, availability, and lead times for MT53E2G32D8QD-046 WT:E.
