MT53E2G32D8QD-053 WT:E

The MT53E2G32D8QD-053 WT:E is a volatile DRAM device implementing mobile LPDDR4 SDRAM technology with a 64 Gbit capacity. It is organized as 2G × 32 and specified for operation at a 1.866 GHz clock frequency.

This device is intended for designs that require LPDDR4 memory density and defined electrical and thermal characteristics, including a 1.1 V supply voltage and an operating temperature range of –30°C to 85°C (TC).

Key Features

• Memory Core — LPDDR4 SDRAM  Mobile LPDDR4 SDRAM architecture providing volatile DRAM functionality.
• Capacity & Organization  64 Gbit total memory, organized as 2G × 32 to support wide data-path implementations.
• Clock Frequency  Specified 1.866 GHz clock frequency for LPDDR4 operation.
• Supply Voltage  1.1 V nominal voltage supply suitable for low-voltage system designs.
• Operating Temperature  Rated for –30°C to 85°C (TC) to accommodate a broad thermal range.
• Package  FBGA package indicated in the product name.

Typical Applications

• Mobile devices  Acts as LPDDR4 memory in mobile systems requiring 64 Gbit density and 1.866 GHz operation.
• Portable electronics  Provides volatile DRAM storage where 1.1 V operation and compact FBGA packaging are required.
• Memory module components  Used as a high-density DRAM component for designers integrating LPDDR4 memory into modules or subsystems.

Unique Advantages

• High-density 64 Gbit capacity:  Delivers substantial memory capacity in a single device to reduce component count.
• 2G × 32 organization:  Wide data organization that aligns with 32-bit data-path designs.
• 1.866 GHz clock support:  Enables high-rate LPDDR4 operation as specified.
• 1.1 V low-voltage operation:  Operates at a 1.1 V supply to support power-sensitive designs.
• Extended temperature rating:  –30°C to 85°C (TC) for use across a broad range of ambient conditions.
• FBGA package:  Package form noted in the product name for compact, board-level implementations.

Why Choose MT53E2G32D8QD-053 WT:E?

The MT53E2G32D8QD-053 WT:E positions itself as a high-density LPDDR4 DRAM option providing a defined combination of capacity (64 Gbit), organization (2G × 32), and a 1.866 GHz clock specification. Its 1.1 V supply and –30°C to 85°C operating range make it suitable for designs that require stable LPDDR4 performance within those electrical and thermal envelopes.

This device is appropriate for engineers and procurement teams specifying LPDDR4 memory components for mobile-focused memory subsystems, module integration, or any application where the listed electrical, timing, and thermal characteristics align with system requirements.

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