MT53E2G32D8QD-053 WT:E TR
| Part Description |
IC DRAM 64GBIT 1.866GHZ FBGA |
|---|---|
| Quantity | 1,141 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.866 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT53E2G32D8QD-053 WT:E TR – IC DRAM 64GBIT 1.866GHZ FBGA
The MT53E2G32D8QD-053 WT:E TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It delivers a 2G × 32 memory organization with an operating clock frequency of 1.866 GHz and a nominal supply voltage of 1.1 V.
This device is presented in an FBGA form factor and is specified with an operating temperature range from -30°C to 85°C, addressing designs that require high-density, high-frequency DRAM memory in systems aligned with mobile LPDDR4 architectures.
Key Features
- Memory Type and Technology Volatile DRAM implemented as SDRAM – Mobile LPDDR4, providing the device's core memory architecture.
- Density and Organization 64 Gbit capacity arranged as 2G × 32, offering high memory density in a single package.
- Performance Clock frequency rated at 1.866 GHz, enabling high-speed memory access consistent with the specified LPDDR4 operation.
- Power Nominal supply voltage of 1.1 V, reflecting the device's low-voltage LPDDR4 operation.
- Operating Temperature Specified temperature range of -30°C to 85°C (TC), supporting deployment across a wide thermal envelope.
- Package FBGA package as indicated in the product name.
Unique Advantages
- High memory capacity: 64 Gbit density supports large memory footprints with a single DRAM device.
- High-speed operation: 1.866 GHz clock frequency enables fast data throughput consistent with LPDDR4 performance.
- Low-voltage operation: 1.1 V supply reduces power draw where low-voltage memory rails are required.
- Compact organization: 2G × 32 memory organization simplifies memory mapping for compatible system designs.
- Extended temperature range: -30°C to 85°C rating supports systems operating in varied thermal conditions.
- Mobile LPDDR4 technology: Provides architecture alignment for designs targeting LPDDR4 memory stacks.
Why Choose MT53E2G32D8QD-053 WT:E TR?
The MT53E2G32D8QD-053 WT:E TR positions itself as a high-density, high-frequency LPDDR4 DRAM solution for designs that require 64 Gbit memory capacity with 2G × 32 organization and 1.866 GHz operation. Its 1.1 V supply and FBGA packaging align with low-voltage, compact memory implementations consistent with Mobile LPDDR4 architectures.
This device is suited to engineering teams and procurement professionals seeking a verifiable DRAM component from Micron Technology Inc. with clearly stated electrical, organizational, and thermal specifications to support scalable memory subsystems.
If you need pricing, availability, or a formal quote for MT53E2G32D8QD-053 WT:E TR, request a quote or submit a sales inquiry to receive detailed purchasing information.
