MT53E2G32D4NQ-046 WT:C TR

The MT53E2G32D4NQ-046 WT:C TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It is organized as 2G × 32 and operates at a clock frequency of 2.133 GHz.

Designed for board-level integration in a 200-VFBGA (10 × 14.5 mm) package and powered at 1.1 V, this device targets systems that require high-frequency mobile DRAM in a compact BGA footprint while supporting an extended operating temperature range of -30°C to 85°C.

Key Features

• Memory Technology Mobile LPDDR4 SDRAM offering standard LPDDR4 architecture for volatile memory applications.
• Density and Organization 64 Gbit capacity organized as 2G × 32, enabling high-density memory implementations in a single device.
• Performance Rated clock frequency of 2.133 GHz to support high-speed memory interfaces and bandwidth-sensitive workloads.
• Power 1.1 V supply voltage suitable for low-voltage mobile DRAM systems.
• Package 200-VFBGA package (10 × 14.5 mm) for compact, board-level mounting and surface-mount integration.
• Operating Temperature Specified operating temperature range of -30°C to 85°C for a variety of environmental conditions.
• Memory Type Volatile DRAM format intended for dynamic memory applications.

Typical Applications

• Mobile devices Provides high-density LPDDR4 memory for mobile platforms that require compact, low-voltage DRAM.
• Compact compute modules Suited for board-level memory integration where a 200-VFBGA package and 64 Gbit density are required.
• High-speed memory subsystems Used in systems that leverage a 2.133 GHz clock to meet higher bandwidth demands.

Unique Advantages

• High density in a single device: 64 Gbit capacity (2G × 32) reduces the number of memory components needed for large-memory designs.
• High-frequency operation: 2.133 GHz clocking supports higher data throughput for bandwidth-sensitive applications.
• Low-voltage operation: 1.1 V supply enables lower power consumption compared with higher-voltage DRAM options.
• Compact BGA package: 200-VFBGA (10 × 14.5 mm) allows dense board placement and is suitable for space-constrained designs.
• Extended temperature range: -30°C to 85°C operation supports deployment across a range of environmental conditions.

Why Choose IC DRAM 64GBIT 2.133GHZ 200VFBGA?

The MT53E2G32D4NQ-046 WT:C TR combines Mobile LPDDR4 architecture, 64 Gbit density, and 2.133 GHz clocking in a compact 200-VFBGA package, delivering a balance of performance and integration for designs requiring high-density, high-frequency volatile memory. Its 1.1 V supply and extended temperature range make it suitable for power-sensitive and temperature-varied deployments.

This device is ideal for engineers and procurement teams specifying board-level LPDDR4 memory where compact packaging, density, and clock performance are primary selection criteria. The combination of features supports scalable memory implementations while simplifying component count and layout considerations.

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