MT53E2G32D4DT-046 WT:A TR

The MT53E2G32D4DT-046 WT:A TR is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM technology. It provides a 2G × 32 memory organization with a 2.133 GHz clock frequency and operates at a 1.1 V supply.

This device is suited for systems and designs that require large-capacity, low-voltage mobile LPDDR4 memory and a defined operating temperature range of -30°C to 85°C.

Key Features

• Memory Core 64 Gbit capacity organized as 2G × 32, implemented as volatile DRAM for transient data storage.
• Technology SDRAM – Mobile LPDDR4 architecture provides the specified mobile DRAM implementation.
• Performance 2.133 GHz clock frequency for high-rate data transfers consistent with the listed clock specification.
• Power 1.1 V supply voltage as specified for low-voltage operation.
• Package FBGA package format as indicated in the product designation.
• Temperature Range Operating temperature specified from -30°C to 85°C (TC).

Typical Applications

• Mobile and handheld devices — Mobile LPDDR4 technology and the 1.1 V supply make this device appropriate for compact, low-voltage memory subsystems.
• High-bandwidth buffers — 2.133 GHz clock frequency supports use where elevated data transfer rates are required within the constraints of the listed specification.
• Embedded systems — Large 64 Gbit capacity and 2G × 32 organization suit embedded designs needing substantial volatile memory.

Unique Advantages

• Large on-die capacity: 64 Gbit memory size enables substantial addressable volatile storage within a single device.
• Defined memory organization: 2G × 32 configuration simplifies system memory mapping and design planning.
• Specified high clock rate: 2.133 GHz clock frequency provides a clear performance parameter for system timing and throughput considerations.
• Low-voltage operation: 1.1 V supply supports designs targeting lower power consumption profiles.
• Wide operating temperature: Rated from -30°C to 85°C for deployment in temperature-variable environments.
• FBGA package format: Compact package designation in the product name supports board-level space considerations.

Why Choose MT53E2G32D4DT-046 WT:A TR?

The MT53E2G32D4DT-046 WT:A TR combines Mobile LPDDR4 SDRAM technology, a 64 Gbit density, and a specified 2.133 GHz clock frequency to deliver a clearly defined memory element for designs requiring substantial volatile storage at low voltage. Its 2G × 32 organization and FBGA package provide concrete integration characteristics for systems engineering and procurement.

This device is appropriate for engineers and procurement teams specifying low-voltage mobile LPDDR4 memory with explicit operating-temperature and clock-frequency requirements, offering predictable electrical and thermal parameters for system-level integration.

Request a quote or submit a pricing inquiry to receive availability and lead-time details for the MT53E2G32D4DT-046 WT:A TR. Sales and quotation teams can provide volume pricing and delivery options based on your project requirements.