MT53E2G32D4DT-046 WT ES:A
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA QDP |
|---|---|
| Quantity | 1,078 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT53E2G32D4DT-046 WT ES:A – IC DRAM 64GBIT 2.133GHZ FBGA QDP
The MT53E2G32D4DT-046 WT ES:A is a volatile DRAM device using Mobile LPDDR4 SDRAM technology. It provides a 64 Gbit memory capacity organized as 2G × 32 and is supplied by Micron Technology Inc.
With a 2.133 GHz clock frequency and a 1.1 V supply, this part targets high-speed mobile LPDDR4 memory implementations where density, operating frequency, and low-voltage operation are key considerations. The device is offered in an FBGA QDP package form factor and supports an operating temperature range of -30°C to 85°C (TC).
Key Features
- Memory Technology Mobile LPDDR4 SDRAM implementation providing volatile DRAM storage.
- Density & Organization 64 Gbit total capacity organized as 2G × 32 to support wide data paths.
- Performance Rated for 2.133 GHz clock frequency to support high-speed memory interfaces.
- Power 1.1 V supply voltage for low-voltage operation consistent with LPDDR4 requirements.
- Package FBGA QDP package as indicated in the product designation.
- Temperature Range Specified operating temperature of -30°C to 85°C (TC) for extended environmental conditions.
Typical Applications
- Mobile Devices Use as system memory in mobile LPDDR4 designs where high density and low-voltage operation are required.
- Embedded Systems High-capacity DRAM for embedded platforms that need 64 Gbit memory organization and wide data buses.
- High-Speed Memory Subsystems Integration into memory subsystems that leverage 2.133 GHz operation for bandwidth-sensitive workloads.
Unique Advantages
- High Density Packaging: 64 Gbit capacity reduces the number of devices required to meet large memory footprints.
- Wide Data Organization: 2G × 32 organization supports wider data paths, simplifying interface design for 32-bit memory lanes.
- High-Frequency Operation: 2.133 GHz clocking enables compatibility with faster LPDDR4 memory interfaces.
- Low Voltage Operation: 1.1 V supply supports lower power operation consistent with mobile LPDDR4 standards.
- Extended Operating Temperature: Rated from -30°C to 85°C (TC) for deployment across a range of environmental conditions.
- From a Recognized Manufacturer: Supplied by Micron Technology Inc., identified by the MT53E2G32D4DT-046 WT ES:A part number.
Why Choose MT53E2G32D4DT-046 WT ES:A?
This MT53E2G32D4DT-046 WT ES:A device positions itself as a high-density Mobile LPDDR4 DRAM option combining 64 Gbit capacity, 2G × 32 organization, and 2.133 GHz operation at a 1.1 V supply. It is suited to designs that require substantial memory capacity in an FBGA QDP package and that operate across the specified -30°C to 85°C temperature window.
Designed and supplied by Micron Technology Inc., the part is appropriate for engineers specifying LPDDR4 memory where density, clock rate, and low-voltage operation are primary selection criteria.
Request a quote or submit a pricing inquiry to receive availability and lead-time information for the MT53E2G32D4DT-046 WT ES:A.
