MT53E2G32D4DT-046 AIT:A
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 458 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Automotive | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | PENDING ECCN | HTS Code | 0000.00.0000 |
Overview of MT53E2G32D4DT-046 AIT:A – IC DRAM 64GBIT 2.133GHZ FBGA
The MT53E2G32D4DT-046 AIT:A is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides high-frequency memory operation at 2.133 GHz and is specified for a 1.1 V supply.
Targeted for designs that require high-density, high-speed mobile LPDDR4 memory, this device also carries an AEC-Q100 qualification and an extended operating temperature range for demanding environments.
Key Features
- Memory Type & Format Volatile DRAM implemented as Mobile LPDDR4 SDRAM; organized as 2G × 32 to deliver 64 Gbit total capacity.
- Frequency Performance Rated for 2.133 GHz clock operation to support high-throughput memory requirements.
- Power Low-voltage operation at a 1.1 V supply to align with low-power system designs.
- Automotive Qualification AEC-Q100 qualified and designated as Automotive grade, supporting use in automotive-capable applications.
- Operating Temperature Specified operating range of −40°C to 95°C (TC) for reliability across a wide temperature span.
Typical Applications
- Automotive Systems — Memory capacity and AEC-Q100 qualification make this device suitable for automotive electronic subsystems that require LPDDR4 DRAM.
- Mobile Devices — Mobile LPDDR4 architecture and 2.133 GHz operation provide the bandwidth and low-voltage operation required in mobile memory subsystems.
- Embedded Computing — High density (64 Gbit) and extended temperature range support embedded platforms with demanding memory and environmental requirements.
Unique Advantages
- High-density memory: 64 Gbit capacity in a 2G × 32 organization reduces the need for multiple devices to achieve large memory pools.
- High-frequency operation: 2.133 GHz clocking delivers the throughput needed for performance-sensitive memory tasks.
- Low-voltage operation: 1.1 V supply supports lower power budgets typical in mobile and compact systems.
- Automotive-grade qualification: AEC-Q100 qualification and Automotive grade designation indicate suitability for automotive application requirements.
- Wide temperature tolerance: −40°C to 95°C (TC) operating range supports deployment across varied environmental conditions.
Why Choose IC DRAM 64GBIT 2.133GHZ FBGA?
This Mobile LPDDR4 SDRAM device combines high density, high-frequency operation, and low-voltage operation with automotive-grade qualification and an extended temperature range. It is positioned for designs that require substantial memory capacity and reliable operation in challenging temperature and qualification environments.
Designers building automotive, mobile, or embedded systems will find this device suitable when a 64 Gbit LPDDR4 DRAM with 2.133 GHz performance and AEC-Q100 qualification is required, offering a balance of capacity, speed, and environmental robustness.
Request a quote or submit an inquiry to receive pricing and availability information for the MT53E2G32D4DT-046 AIT:A.
