MT53E2G32D4DE-046 WT:C
| Part Description |
IC DRAM 64GBIT PAR 200TFBGA |
|---|---|
| Quantity | 596 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 39 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-TFBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | 3.5 ns | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V | Memory Type | Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 200-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of MT53E2G32D4DE-046 WT:C – 64 Gbit Mobile LPDDR4X DRAM, 200-TFBGA
The MT53E2G32D4DE-046 WT:C is a 64 Gbit volatile DRAM device implemented in mobile LPDDR4X SDRAM architecture. It provides a 2G x 32 memory organization with a parallel memory interface and a compact 200-TFBGA (10 × 14.5 mm) package.
Key attributes include a 2.133 GHz clock frequency, 3.5 ns access time, low-voltage operation across 1.06 V to 1.17 V, and an operating temperature range of −25°C to 85°C (TC), making it suitable where high-density, low-voltage DRAM is required.
Key Features
- Memory Core 64 Gbit DRAM organized as 2G × 32 providing a high-density memory array for compact system designs.
- Technology & Interface SDRAM – Mobile LPDDR4X technology with a parallel memory interface for standard DRAM integration.
- Performance Operates at a clock frequency of 2.133 GHz with a specified access time of 3.5 ns and a write cycle time (word page) of 18 ns.
- Power Low-voltage operation with a supply range of 1.06 V to 1.17 V to support reduced power consumption in appropriate system designs.
- Package Supplied in a 200-TFBGA package (10 × 14.5 mm) suitable for space-constrained board layouts.
- Environmental Range Specified operating temperature of −25°C to 85°C (TC) for thermal planning in typical commercial temperature environments.
- Volatile Memory Type Classified as volatile memory (DRAM), intended for applications requiring temporary data storage during operation.
Unique Advantages
- High memory density: 64 Gbit capacity enables large in-system buffers and data storage without multiple devices.
- High-speed operation: 2.133 GHz clock and 3.5 ns access time provide low-latency memory cycles for performance-sensitive tasks.
- Low-voltage operation: 1.06 V–1.17 V supply range supports lower power consumption when integrated into compatible power architectures.
- Compact package: 200-TFBGA (10 × 14.5 mm) package helps minimize PCB area for dense board designs.
- Deterministic timing: Documented write cycle time of 18 ns (word page) aids timing and memory subsystem planning.
Why Choose IC DRAM 64GBIT PAR 200TFBGA?
The MT53E2G32D4DE-046 WT:C combines high-density LPDDR4X SDRAM technology with documented high-speed timing and a low-voltage supply range, offering a focused solution where 64 Gbit volatile memory is required in a compact package. Its specified clock frequency, access time, and cycle timings support integration into designs that need defined performance and predictable timing.
This device suits engineers and procurement teams specifying mobile LPDDR4X DRAM with a 2G × 32 organization in a 200-TFBGA footprint, and it provides clear electrical and thermal parameters to support long-term design planning and BOM decisions.
Request a quote or contact sales for pricing, availability, and lead-time information for MT53E2G32D4DE-046 WT:C.
