MT53E2G32D4DE-046 WT:C TR

The MT53E2G32D4DE-046 WT:C TR is a 64 Gbit DRAM device implementing Mobile LPDDR4X SDRAM architecture with a 2G × 32 memory organization and a parallel memory interface. It provides high-density, low-voltage embedded memory in a compact 200‑TFBGA (10 × 14.5 mm) package suitable for mobile and space-constrained systems.

Key attributes include a 2.133 GHz clock frequency, 3.5 ns access time, and a supply voltage range of 1.06 V to 1.17 V, making it appropriate where low-voltage LPDDR4X operation and high data throughput are required within the specified operating temperature range.

Key Features

• Memory Core 64 Gbit DRAM organized as 2G × 32, providing a high-density memory array for embedded applications.
• Technology Mobile LPDDR4X SDRAM technology designed for low-voltage operation and typical mobile DRAM behavior.
• Performance 2.133 GHz clock frequency with a 3.5 ns access time and an 18 ns write cycle time (word page), supporting fast read/write responsiveness.
• Power Operates across a supply voltage range of 1.06 V to 1.17 V consistent with LPDDR4X low-voltage requirements.
• Interface Parallel memory interface with a 2G × 32 organization to support wide data paths and efficient data transfers.
• Package 200‑TFBGA package (10 × 14.5 mm) for compact board-level integration in space-constrained designs.
• Environmental Range Specified operating temperature range of −25 °C to 85 °C (TC) for operation across a broad thermal envelope.

Typical Applications

• Mobile Devices — Implements high-density LPDDR4X memory in handheld and mobile platforms that require low-voltage operation and compact packaging.
• Embedded Systems — Serves as onboard DRAM for embedded computing modules where space and power are constrained and higher memory density is needed.
• Portable Electronics — Suitable for compact consumer electronics that leverage LPDDR4X technology for reduced power draw and high data throughput.

Unique Advantages

• 64 Gbit Density: Enables higher memory capacity per device for systems requiring increased storage in a single package.
• LPDDR4X Low-Voltage Operation: 1.06 V to 1.17 V supply range reduces power consumption compared with higher-voltage DRAM options.
• High Clock Rate and Low Latency: 2.133 GHz clock with 3.5 ns access time and 18 ns write cycle time for responsive memory performance.
• Wide Parallel Interface: 2G × 32 organization provides a broad data path for efficient transfers in parallel memory systems.
• Compact 200‑TFBGA Package: Small footprint (10 × 14.5 mm) supports integration into space-limited PCBs and modules.
• Broad Operating Temperature: Rated for −25 °C to 85 °C to accommodate a range of environmental conditions.

Why Choose MT53E2G32D4DE-046 WT:C TR?

The MT53E2G32D4DE-046 WT:C TR combines LPDDR4X mobile SDRAM architecture with a 64 Gbit capacity and a compact 200‑TFBGA package, delivering a balance of density, performance, and low-voltage operation. Its 2.133 GHz clock rate, 3.5 ns access time, and parallel 2G × 32 organization make it suitable for designs where compact form factor and efficient memory throughput are priorities.

This device is suited for designers of mobile and embedded products that require scalable memory capacity within strict power and space constraints. The specified electrical and thermal ranges support robust integration into systems operating between −25 °C and 85 °C with a defined 1.06 V–1.17 V supply window.

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