MT53E2G32D4DE-046 AUT:C TR

The MT53E2G32D4DE-046 AUT:C TR is a 64 Gbit volatile DRAM organized as 2G × 32 using Mobile LPDDR4X SDRAM technology. It provides high-density parallel memory in a 200‑TFBGA (10 × 14.5 mm) package for designs requiring compact, high-speed volatile memory.

With a 2.133 GHz clock rate, 3.5 ns access time and automotive AEC-Q100 qualification, this device targets systems where high data throughput, wide operating temperature range and industry qualification are required.

Key Features

• Memory Type & Format 
  Volatile DRAM implemented as Mobile LPDDR4X SDRAM, with a total capacity of 64 Gbit.
• Organization & Interface 
  Arranged as 2G × 32 with a parallel memory interface for integration into parallel memory subsystems.
• Performance 
  Rated clock frequency of 2.133 GHz with an access time of 3.5 ns and a write cycle time (word page) of 18 ns for high-speed data operations.
• Power 
  Operates from a supply voltage range of 1.06 V to 1.17 V consistent with LPDDR4X operating conditions.
• Package 
  200‑TFBGA package (10 × 14.5 mm) for compact board footprint and BGA mounting.
• Reliability & Qualification 
  AEC‑Q100 qualification with an operating temperature range of −40°C to 125°C (TC), suitable for temperature-critical applications.

Typical Applications

• Automotive Systems 
  Memory for automotive electronic control and infotainment modules where AEC‑Q100 qualification and wide temperature range are required.
• Mobile and Embedded Platforms 
  High-density LPDDR4X memory for compact embedded designs that require parallel DRAM integration and high data throughput.
• High-Speed Buffering 
  Use as a high-capacity volatile buffer in systems that demand fast access times and sustained clock performance.

Unique Advantages

• High density (64 Gbit): Provides significant on-board volatile storage in a single DRAM device, reducing the need for multiple components.
• LPDDR4X technology at 2.133 GHz: Supports high-frequency operation and low-latency access with a 3.5 ns access time and 18 ns write cycle time.
• Automotive qualification (AEC‑Q100): Meets industry qualification for automotive applications and supports operation across −40°C to 125°C (TC).
• Compact BGA package: 200‑TFBGA (10 × 14.5 mm) package enables space-efficient board layouts for dense system designs.
• Low-voltage operation: Operates within a 1.06 V to 1.17 V supply range consistent with LPDDR4X power domains.

Why Choose IC DRAM 64GBIT PAR 200TFBGA?

The MT53E2G32D4DE-046 AUT:C TR combines high density, fast LPDDR4X SDRAM performance and automotive-grade qualification in a compact 200‑TFBGA package. Its 2G × 32 organization and parallel interface make it suitable for designs that require substantial volatile memory bandwidth in constrained board space.

This device is well suited for engineers specifying memory for automotive and embedded systems that demand high throughput, a wide operating temperature range, and AEC‑Q100 qualification. Its combination of capacity, clocking and packaging provides a practical option for scalable, robust memory subsystems.

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