MT53E2G32D4DE-046 AUT:C

The MT53E2G32D4DE-046 AUT:C is a 64 Gbit DRAM device implemented as 2G × 32 SDRAM using Mobile LPDDR4X technology. It provides a parallel memory interface in a 200-TFBGA package and is targeted at applications requiring high-density, high-speed volatile memory.

Qualified to AEC-Q100 and rated for an operating temperature range of −40°C to 125°C, this device is suited to designs that require automotive-grade qualification along with low-voltage operation (1.06–1.17 V) and high clock performance (2.133 GHz).

Key Features

• Memory Core 64 Gbit DRAM organized as 2G × 32 using Mobile LPDDR4X SDRAM architecture for high-density parallel memory.
• Performance Clock frequency of 2.133 GHz with an access time of 3.5 ns and a write cycle time (word page) of 18 ns to support high-throughput memory operations.
• Power Low-voltage operation with a supply range of 1.06–1.17 V to support energy-sensitive system designs.
• Qualification & Grade AEC-Q100 qualification and an operating temperature range of −40°C to 125°C (TC) indicate suitability for automotive-grade use cases.
• Package & Mounting 200-TFBGA surface-mount package (10×14.5 mm) for compact board-level integration and high I/O density.
• Interface & Format Parallel memory interface in DRAM format to integrate with parallel memory subsystems.

Typical Applications

• Automotive memory subsystems — AEC-Q100 qualification and −40°C to 125°C operating range make the device appropriate for automotive electronics requiring qualified volatile memory.
• Mobile and handheld platforms — Mobile LPDDR4X SDRAM architecture and low-voltage supply support compact, power-sensitive mobile designs.
• High-density parallel memory modules — 64 Gbit organization and 2G × 32 configuration serve applications that require large, fast parallel DRAM arrays.

Unique Advantages

• High memory density: 64 Gbit capacity enables consolidation of memory requirements in a single device.
• High-speed operation: 2.133 GHz clock frequency with 3.5 ns access time supports demanding throughput requirements.
• Automotive qualification: AEC-Q100 qualification and wide temperature range provide design confidence for automotive applications.
• Low-voltage operation: 1.06–1.17 V supply reduces system power consumption in energy-sensitive designs.
• Compact packaging: 200-TFBGA (10×14.5 mm) package offers a space-efficient solution for high-density board layouts.

Why Choose MT53E2G32D4DE-046 AUT:C?

The MT53E2G32D4DE-046 AUT:C combines high-density LPDDR4X SDRAM architecture with automotive-grade qualification and a compact 200-TFBGA package to address designs that require both performance and robustness. Its low-voltage operation and high clock speed make it suitable for systems where power efficiency and throughput are key considerations.

Backed by Micron Technology Inc., this device is positioned for engineers developing automotive and mobile applications that need verified qualification, wide temperature capability, and a parallel DRAM interface for integration into high-density memory subsystems.

Request a quote or contact sales to discuss availability, pricing, and integration support for MT53E2G32D4DE-046 AUT:C.