MT53E2G32D4DE-046 AIT:C TR

The MT53E2G32D4DE-046 AIT:C TR is a 64 Gbit volatile DRAM device based on Mobile LPDDR4X SDRAM architecture, organized as 2G × 32 with a parallel memory interface. It is supplied in a 200‑TFBGA (10 × 14.5) package and is AEC‑Q100 qualified for automotive applications.

Designed for systems that require high-density, high-frequency memory in a compact package, this device offers specified clock operation, access timing, and a defined supply voltage range to support predictable integration into automotive and mobile/embedded memory subsystems.

Key Features

• Memory Core 64 Gbit capacity organized as 2G × 32 for large addressable memory space.
• Technology SDRAM – Mobile LPDDR4X architecture supporting modern mobile/embedded memory designs.
• Performance Specified clock frequency of 2.133 GHz with an access time of 3.5 ns and a write cycle time (word page) of 18 ns.
• Power Operates from a defined supply range of 1.06 V to 1.17 V for controlled power-domain design.
• Interface Parallel memory interface with 2G × 32 organization for integration into parallel DRAM subsystems.
• Package 200‑TFBGA package case, referenced as 200‑TFBGA (10×14.5), for compact board-level footprint.
• Temperature & Qualification Operating temperature range −40°C to 95°C (TC) and AEC‑Q100 qualification for automotive-grade applications.

Typical Applications

• Automotive Systems AEC‑Q100 qualification and −40°C to 95°C operation make the device suitable for in-vehicle computing and infotainment memory subsystems.
• Mobile and Embedded Devices Mobile LPDDR4X technology and 2.133 GHz clocking fit high-density memory needs in mobile and embedded platforms.
• High-density Memory Subsystems 64 Gbit capacity and 2G × 32 organization support designs requiring large on-board DRAM capacity in a compact package.

Unique Advantages

• Large memory density: 64 Gbit organized as 2G × 32 provides substantial addressable memory for capacity‑intensive designs.
• Specified high-frequency operation: 2.133 GHz clocking combined with a 3.5 ns access time supports fast memory access within system timing budgets.
• Automotive-grade qualification: AEC‑Q100 qualification and extended temperature range enable use in automotive applications requiring qualified components.
• Predictable power domain: Defined supply voltage range (1.06 V–1.17 V) allows for controlled power sequencing and design margining.
• Compact board footprint: 200‑TFBGA (10×14.5) package reduces PCB area for high-density assemblies.
• Parallel interface compatibility: 2G × 32 organization and parallel DRAM interface simplify integration into parallel memory architectures.

Why Choose IC DRAM 64GBIT PAR 200TFBGA?

The IC DRAM 64GBIT PAR 200TFBGA (MT53E2G32D4DE-046 AIT:C TR) from Micron Technology Inc. combines 64 Gbit capacity, Mobile LPDDR4X SDRAM architecture, and specified timing and voltage characteristics to support compact, high-density memory designs. Its AEC‑Q100 qualification and −40°C to 95°C operating range position it for automotive and industrial use where qualified components are required.

This device is suited to designers and procurement teams targeting automotive-grade or mobile/embedded memory subsystems that need a defined performance envelope, a compact 200‑TFBGA package, and a clear specification set for integration and validation.

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