MT53E2G32D4DT-046 WT:A
| Part Description |
IC DRAM 64GBIT 2.133GHZ FBGA |
|---|---|
| Quantity | 551 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 2G x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | PENDING ECCN | HTS Code | 0000.00.0000 |
Overview of MT53E2G32D4DT-046 WT:A – IC DRAM 64GBIT 2.133GHZ FBGA
The MT53E2G32D4DT-046 WT:A is a 64 Gbit volatile DRAM device implemented in Mobile LPDDR4 SDRAM architecture. It provides a 2G × 32 memory organization and operates at a clock frequency of 2.133 GHz, targeting high-speed memory applications.
With a 1.1 V supply and an operating temperature range of −30°C to 85°C (TC), this FBGA-packaged DRAM is intended for systems that require high-density, high-frequency mobile LPDDR4 memory with low-voltage operation.
Key Features
- Memory Core Mobile LPDDR4 SDRAM technology providing volatile DRAM storage in a 64 Gbit density.
- Organization 2G × 32 memory organization that defines the chip’s array configuration and data width.
- High-Speed Operation Clock frequency of 2.133 GHz suitable for high-throughput memory access patterns.
- Low-Voltage Supply Operates from a 1.1 V supply, supporting lower power draw relative to higher-voltage memories.
- Thermal Range Rated for operation from −30°C to 85°C (TC), accommodating a broad range of ambient conditions.
- Package FBGA-format device as indicated in the product description for board-level integration.
Typical Applications
- Mobile Devices Used where Mobile LPDDR4 memory is required for compact, high-density system memory implementations.
- Handheld Electronics Provides high-speed DRAM capacity for handheld platforms that need dense, low-voltage memory.
- Embedded Systems Suitable for embedded designs needing 64 Gbit volatile memory with a 2.133 GHz interface.
Unique Advantages
- High-density memory: 64 Gbit capacity enables larger data storage within a single DRAM device, reducing the number of components required on the BOM.
- High clock rate: 2.133 GHz operation supports high-throughput memory access for performance-sensitive workloads.
- Low operating voltage: 1.1 V supply supports lower power operation compared to higher-voltage alternatives.
- Compact packaging: FBGA packaging facilitates board-level integration in space-constrained designs.
- Wide operating temperature: −30°C to 85°C (TC) rating provides adaptability across varied thermal environments.
Why Choose IC DRAM 64GBIT 2.133GHZ FBGA?
The MT53E2G32D4DT-046 WT:A positions itself as a high-density, high-frequency Mobile LPDDR4 DRAM solution for designs that require 64 Gbit volatile memory with low-voltage operation. Its 2G × 32 organization and 2.133 GHz clock frequency make it suitable for systems needing sustained memory bandwidth within a compact FBGA package.
This device is appropriate for engineers and procurement teams specifying memory for mobile, handheld, and embedded applications where capacity, speed, and a −30°C to 85°C operating range are primary considerations.
Request a quote or submit an inquiry to obtain pricing and availability for the MT53E2G32D4DT-046 WT:A.
